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Effective Mass and Spin Susceptibility of Dilute Two-dimensional Holes in GaAs

Effective Mass and Spin Susceptibility of Dilute Two-dimensional Holes in GaAs Nai Phuan Ong , Princeton University, DMR 0819860 Princeton Center for Complex Materials (PCCM).

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Effective Mass and Spin Susceptibility of Dilute Two-dimensional Holes in GaAs

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  1. Effective Mass and Spin Susceptibility of Dilute Two-dimensional Holes in GaAs NaiPhuanOng, Princeton University, DMR 0819860 Princeton Center for Complex Materials (PCCM) IRG-D researchers are exploring the use of holes in semiconductors for use as quantum bits. Holes are positively charged carriers that exist in semiconductors, similar to negatively charged electrons. In contrast to electrons, theory suggests that hole spins may be more robust carriers of quantum information. Basic quantities, such as the effective mass (m*) and the Lande g-factor (g*), whose product determines the spin-susceptibility (χ*) of holes, must be determined in order to guide the fabrication of quantum devices based on hole-spins. YenTing Chiu, MediniPadmanabhan, T. Gokmen, J. Shabani, E. Tutuc, M. Shayegan, and R. Winkler, “Effective Mass and Spin Susceptibility of Dilute Two-Dimensional Holes in GaAs,” Phys. Rev. B 84, 155459 (2011). Hole Electron Magnetoresistance traces at a density of 6.30 x 1010 /cm2. The traces were taken at various temperatures as shown in different colors. Left inset shows the Dingle fit at ν =8. Right inset is a schematic picture showing the band structure of the GaAs hole system at zero magnetic field.

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