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Probabilistic modelling of performance parameters of Carbon Nanotube transistorsPowerPoint Presentation

Probabilistic modelling of performance parameters of Carbon Nanotube transistors

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Probabilistic modelling of performance parameters of Carbon Nanotube transistors

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Probabilistic modelling of performance parameters of Carbon Nanotube transistors

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Department of Electrical and Computer Engineering

By

Yaman Sangar

Amitesh Narayan

Snehal Mhatre

- Motivation
- Introduction
- CMOS v/s CNTFETs
- CNT Technology - Challenges
- Probabilistic model of faults
- Modelling performance parameters:
- ION / IOFF tuning ratio
- Gate delay
- Noise Margin

- Conclusion

- Motivation
- Introduction
- CMOS v/s CNTFETs
- CNT Technology – Challenges
- Probabilistic model of faults
- Modelling performance parameters:
- ION / IOFF tuning ratio
- Gate delay
- Noise Margin

- Conclusion

MOTIVATION: Why CNTFET?

- Dennard Scaling might not last long
- Increased performance by better algorithms?
- More parallelism?
- Alternatives to CMOS - FinFETs, Ge-nanowire FET, Si-nanowire FET, wrap-around gate MOS, graphene ribbon FET
- What about an inherently faster and less power consuming device?
- Yay CNTFET – faster with low power

- Motivation
- Introduction
- CMOS v/s CNTFETs
- CNT Technology – Challenges
- Probabilistic model of faults
- Modelling performance parameters:
- ION / IOFF tuning ratio
- Gate delay
- Noise Margin

- Conclusion

- CNT is a tubular form of carbon with diameter as small as 1nm
- CNT is configurationally equivalent to a 2-D graphene sheet rolled into a tube.

Carbon Nanotubes

- Single Walled CNT (SWNT)
- Double Walled CNT (DWNT)
- Multiple Walled CNT (MWNT)
- Depending on Chiral angle:
- Semiconducting CNT (s-CNT)
- Metallic CNT (m-CNT)

Types of CNTs

Properties of CNTs

- Strong and very flexible molecular material
- Electrical conductivity is 6 times that of copper
- High current carrying capacity
- Thermal conductivity is 15 times more than copper
- Toxicity?

CNTFET

- How CNTs conduct?
- Gate used to electrostatically induce carriers into tube
- Ballistic Transport

- Motivation
- Introduction
- CMOS v/s CNTFETs
- CNT Technology – Challenges
- Probabilistic model of faults
- Modelling performance parameters:
- ION / IOFF tuning ratio
- Gate delay
- Noise Margin

- Conclusion

- Simulation based Comparison between CMOS and CNT technology

- Simulation based Comparison between CMOS and CNT technology

Better delay

- Simulation based Comparison between CMOS and CNT technology

Better delay

At lower power!

- Motivation
- Introduction
- CMOS v/s CNTFETs
- CNT Technology – Challenges
- Probabilistic model of faults
- Modelling performance parameters:
- ION / IOFF tuning ratio
- Gate delay
- Noise Margin

- Conclusion

Major CNT specific variations

CNT density variation

Metallic CNT induced count variation

CNT diameter variation

CNT misalignment

CNT doping variation

- Unavoidable process variations
- Performance parameters affected

Challenges with CNT technology

CNT diameter variation

CNT density variation

- Current variation
- Threshold voltage variation

CNT doping variation

CNT Misalignment

- Changes effective CNT length
- Short between CNTs
- Incorrect logic functionality
- Reduction in drive current

- May not lead to unipolar behavior

Metallic CNT induced count variation

m-CNT

m-CNT

Current

s-CNT

s-CNT

- Excessive leakage current
- Increases power consumption
- Changes gate delay
- Inferior noise performance
- Defective functionality

Vgs

- VMR Technique : A special layout called VMR structure consisting of inter-digitated electrodes at minimum metal pitch is fabricated. M-CNT electrical breakdown performed by applying high voltage all at once using VMR. M-CNTs are burnt out and unwanted sections of VMR are later removed.
- Using Thermal and Fluidic Process: Preferential thermal desorption of the alkyls from the semiconducting nanotubes and further dissolution of m-CNTs in chloroform.
- Chemical Etching: Diameter dependent etching technique which removes all m-CNTs below a cutoff diameter.

- Motivation
- Introduction
- CMOS v/s CNTFETs
- CNT Technology – Challenges
- Probabilistic model of faults
- Modelling performance parameters:
- ION / IOFF tuning ratio
- Gate delay
- Noise Margin

- Conclusion

Probability of grown CNT count

- ps= probability of s-CNT
- pm= probability of m-CNT
- ps = 1 - pm
- Ngs= number of grown s-CNTs
- Ngm= number of grown m-CNTs
- N= total number of CNTs

- Ns= number of surviving s-CNTs
- Nm = number of surving m-CNTs
- prs= conditional probability that a CNT is removed given that it is s-CNT
- prm= conditional probability that a CNT is removed given that it is m-CNT
- qrs= 1 - prs
- qrm= 1 -prm

- Motivation
- Introduction
- CMOS v/s CNTFETs
- CNT Technology – Challenges
- Probabilistic model of faults
- Modelling performance parameters:
- ION / IOFF tuning ratio
- Gate delay
- Noise Margin

- Conclusion

- ION / IOFF is indicator of transistor leakage
- Improper ION / IOFF → slow output transition or low output swing
- Target value of ION / IOFF = 104

Effect of CNT count variation on ION / IOFF tuning ratio

Current of a single CNT

- ICNT= ps Is+ pmIm
- µ(ICNT) = psµ(Is)+ pmµ(Im)
- ICNT=drive current of single CNT (type unknown)
- Is =drive current of single s-CNT
- Im= drive current of single m-CNT
- ps= probability of s-CNT
- pm= probability of m-CNT

Ns= count of s-CNT

Nm= count of m-CNT

Is,on= s-CNT current, Vgs = Vds = Vdd

Is,off= s-CNT current, Vgs = 0 and Vds = Vdd

Im= m-CNT current, Vds = Vdd

ION / IOFF ratio of CNTFET

ION / IOFF ratio of CNTFET

µ (Ns) = ps (1 - prs) N

µ (Nm) = pm(1 - prm) N

Effect of various processing parameters on the ratio µ(ION) / µ(IOFF)

- µ(ION) / µ(IOFF) is more sensitive to prm
- µ(ION) / µ(IOFF) = 104 for prm > 1 – 10 -4 = 99.99 % for pm = 33.33%

1- prm

- Motivation
- Introduction
- CMOS v/s CNTFETs
- CNT Technology – Challenges
- Probabilistic model of faults
- Modelling performance parameters:
- ION / IOFF tuning ratio
- Gate delay
- Noise Margin

- Conclusion

Effect of CNT count variation on Gate delay

= =

Plot of v/s

= 0.3

N = 10

N = 20

N = 40

N = 30

N = 50

Plot of v/s N

0.9

0.8

0.6

0.4

0.2

N

- Motivation
- Introduction
- CMOS v/s CNTFETs
- CNT Technology – Challenges
- Probabilistic model of faults
- Modelling performance parameters:
- ION / IOFF tuning ratio
- Gate delay
- Noise Margin

- Conclusion

Noise Margin of CNTFET

pFET

- Substituting= Vin, , and
- =
- Differentiating with respect to Vin and substituting -1

nFET

VIL and VIH

For CMOS,

For CNTFET,

NML = VIL - 0

NMH = VDD – VIH

- Motivation
- Introduction
- CMOS v/s CNTFETs
- CNT Technology – Challenges
- Probabilistic model of faults
- Modelling performance parameters:
- ION / IOFF tuning ratio
- Gate delay
- Noise Margin

- Conclusion

- Modeled count variations and hence device current as a probabilistic function
- Studied the affect of these faults on tuning ratio and gate delay
- Inferred some design guidelines that could be used to judge the correctness of a process
- Mathematically derived noise margin based on current equations – better noise margin than a CMOS