1 / 24

SCIPP R&D on Long Shaping-Time Electronics

SCIPP R&D on Long Shaping-Time Electronics. 4 th SiLC Meeting Barcelona, Spain (by remote connection) December 19 2006 Bruce Schumm. The SCIPP/UCSC ILC HARDWARE GROUP. Faculty/Senior Vitaliy Fadeyev Alex Grillo Bruce Schumm Abe Seiden. Post-Docs Jurgen Kroseberg Lei Wang. Students

joshwa
Download Presentation

SCIPP R&D on Long Shaping-Time Electronics

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. SCIPP R&D on Long Shaping-Time Electronics 4th SiLC Meeting Barcelona, Spain (by remote connection) December 19 2006 Bruce Schumm

  2. The SCIPP/UCSC ILC HARDWARE GROUP Faculty/Senior Vitaliy Fadeyev Alex Grillo Bruce Schumm Abe Seiden Post-Docs Jurgen Kroseberg Lei Wang Students Greg Horn Gabe Saffier-Ewing Lead Engineer: Ned Spencer Technical Staff: Max Wilder, Forest Martinez-McKinney (Students are undergraduates from physics and engineering)

  3. Silicon Microstrip Readout R&D • Initial Motivation • Exploit long shaping time (low noise) and power cycling to: • Remove electronics and cabling from active area (long ladders) • Eliminate need for active cooling SiD Tracker

  4. c The Gossamer Tracker • Ideas: • Low noise readout  Long ladders  substantially limit electronics readout and support • Thin inner detector layers • Exploit duty cycle  eliminate need for active cooling Competitive with gaseous tracking over full range of momentum (also: forward region) Alternative: shorter ladders, but better point resolution

  5. Alternative: shorter ladders, but better point resolution • The LSTFE approach would be well suited to use in short-strip applications, and would offer several potential advantages relative to other approaches • Optimized for LC tracking (less complex) • More efficient data flow • No need for buffering Would require development of 2000 channel chip w/ bump bonding (should be solved by KPiX development)

  6. Pulse Development Simulation Christian Flacco & Michael Young (Grads); John Mikelich (Undergrad) Long Shaping-Time Limit: strip sees signal if and only if hole is collected onto strip (no electrostatic coupling to neighboring strips) Include:Landau deposition (SSSimSide; Gerry Lynch LBNL), variable geometry, Lorentz angle, carrier diffusion, electronic noise and digitization effects

  7. Result: S/N for 167cm Ladder Simulation suggests that long-ladder operation is feasible

  8. The LSTFE-2 ASIC Process: TSMC 0.25 m CMOS 1 s shaping time; analog readout it Time-Over-Thres-hold with 400 nsec clock

  9. 128 mip 1 mip Operating point threshold Readout threshold 1/4 mip

  10. Electronics Simulation Detector Noise: From SPICE simulation, normalized to bench tests with GLAST electronics Analog Measurement: Employs time-over-threshold with variable clock speed; lookup table provides conversions back into analog pulse height (as for actual data) RMS Gaussian Fit Essential tool for design of front-end ASIC Detector Resolution (units of 10m)

  11. Li Hi Li+1 Hi+1 Li+2 Hi+2 Li+3 Hi+3 Li+4 Hi+4 Li+5 Hi+5 Li+6 Hi+6 Proposed LSTFE Back-End Architecture Low Comparator Leading-Edge-Enable Domain 8:1 Multi-plexing (clock = 50 ns) FIFO (Leading and trailing transitions) Event Time Clock Period  = 400 nsec

  12. DIGITAL ARCHITECTURE: FPGA DEVELOPMENT Digital logic should perform basic zero suppression (intrinsic data rate for entire tracker would be approximately 50 GHz), but must retain nearest-neighbor information for accurate centroid.

  13. DIGITAL ARCHITECTURE VERIFICATION ModelSim package permits realistic simulation of FPGA code (signal propagation not yet simulated) Simulate detector background and noise rates for 500 GeV running, as a function of read-out threshold. Per 128 channel chip ~ 7 kbit per spill  35 kbit/second For entire long shaping-time tracker ~ 0.5 GHz data rate (x100 data rate suppression) Nominal Readout Threshold

  14. Note on LSTFE Digital Architecture Use of time-over-threshold (vs. analog-to-digital conversion) permits real-time storage of pulse-height information.  No concern about buffering  LSTFE system can operate in arbitrarily high-rate environment; is ideal for (short ladder) forward tracking systems.

  15. INITIAL RESULTS LSTFE chip mounted on readout board FPGA-based control and data-acquisition system

  16. Note About LSTFE Shaping Time • Original target: shape = 3 sec, with some controlled variability (“ISHAPR”) • Appropriate for long (2m) ladders In actuality, shape ~ 1.5 sec; tests done at 1.2 sec, closer to optimum for SLAC short-ladder approach Difference between target and actual shaping time understood in terms of simulation (full layout)

  17. Qin= 1.0 fC Qin= 0.5 fC Comparator S Curves Vary threshold for given input charge Read out system with FPG-based DAQ Get 1-erf(threshold) with 50% point giving response, and width giving noise Qin= 1.5 fC Qin= 2.0 fC Stable behavior to Vthresh < 10% of min-i Qin= 2.5 fC Qin= 3.0 fC

  18. Noise vs. Capacitance (at shape = 1.2 s) Measured dependence is roughly (noise in equivalent electrons) noise = 375 + 8.9*C with C in pF. Experience at 0.5 m had suggested that model noise parameters needed to be boosted by 20% or so; these results suggest 0.25 m model parameters are accurate  Noise performance somewhat better than anticipated. Expected Observed 1 meter

  19. Channel-to-Channel Matching Gain: 150 mV/fC <1% rms Offset: 10 mV rms Occupancy threshold of 1.2 fC (1875 e-)  180 mV ± 2 mV (20 e-) from gain variation ± 10 mV (100 e-) from offset variation

  20. Power Cycling • Idea (roughly): Latch operating bias points and isolate chip from outside world. • Per-channel power consumption reduces from ~1 mW to ~10 W. • Restoration to operating point should take ~ 1 msec. • Current status: • Internal leakage (protection diodes + ?) degrades latched operating point • Restoration takes ~40 msec (x5 power savings) • Injection of small current (< 1 nA) to counter leakage allows for 1 msec restoration. • Current focus of bench tests.

  21. Power Cycling with Small Injected Current Need to determine whether leakage problem is fun-damental (to sub-strate) or not (protection diode leakage) to understand if we can design around the leakage. Another (vastly inferior) approach would be to design in an injected current (process/temp variation? Power Control Preamp Response Shaper Response

  22. LONG LADDER CONSTRUCTION

  23. LONG LADDER EXPERIENCE A current focus of SCIPP activity With 40cm ladder (50pF load) are seeing ~30% greater noise than expected LSTFE-2 DESIGN LSTFE-1 gain rolls off at ~10 mip; are instituting log-amp design (50 mip dynamic range) Power cycling sol’n that cancels (on-chip) leakage currents Improved environmental isolation Additional amplification stage (noise, shaping time, matching Improved control of return-to-baseline for < 4 mip signals Multi-channel (64? 128? 256?) w/ 8:1 multiplexing of output Must still establish pad geometry (sensor choice!)

  24. LSTFE SUMMARY • The LSTFE readout system is: • Universally applicable (long strips, short strips, central, forward, SiD, LDC, GLD) • Specifically and carfully optimized for ILC tracking • Relative simple (reliability, yield) • In a relatively advanced stage of development • Amplifier/comparator looks functional • Headway being made on fast power cycling • Digital architecture soon available on FPGA • Hoping to join SiLC testbeam run in late 2007

More Related