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The first results on cryogenic semiconductor detectors for advancing the LHC beam loss monitors

The first results on cryogenic semiconductor detectors for advancing the LHC beam loss monitors. Presented by Vladimir Eremin on behalf of Ioffe PTI (St.Petersburg) RIMST (Zelenograd) BE-BI-BL, Cryo lab., and RD39 (CERN) teams. V. Eremin, Bari, 29.05 – 1.06.12. The new BLM arrangement.

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The first results on cryogenic semiconductor detectors for advancing the LHC beam loss monitors

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  1. The first results on cryogenic semiconductor detectors for advancing the LHC beam loss monitors Presented by Vladimir Eremin on behalf of Ioffe PTI (St.Petersburg) RIMST (Zelenograd) BE-BI-BL, Cryo lab., and RD39 (CERN) teams V. Eremin, Bari, 29.05 – 1.06.12

  2. The new BLM arrangement V. Eremin, Bari, 29.05 – 1.06.12

  3. TCT cryogenic module V. Eremin, Bari, 29.05 – 1.06.12

  4. Arrangement with 5 cryogenic modules V. Eremin, Bari, 29.05 – 1.06.12

  5. Inside the cryostate V. Eremin, Bari, 29.05 – 1.06.12

  6. Cryostat V. Eremin, Bari, 29.05 – 1.06.12

  7. The beam test area V. Eremin, Bari, 29.05 – 1.06.12

  8. Charge collection V. Eremin, Bari, 29.05 – 1.06.12

  9. Electron collection V. Eremin, Bari, 29.05 – 1.06.12

  10. Hole drift velocity V. Eremin, Bari, 29.05 – 1.06.12

  11. Collected charge in Silicon and Diamond detectors V. Eremin, Bari, 29.05 – 1.06.12

  12. Sc diamond detector polarization V. Eremin, Bari, 29.05 – 1.06.12

  13. Polarization time in diamond The polarization criteria t= 0 Neff = 0 t=tpol Neff = Ncr E(x) x Polarization by trapping: MGA (2.7eV) σtr=1e-15cm2, Ntr=1e15 cm-3) RT Trapping time = 1e-7c Detrapping time = 1e35 c Collection time = 1e-8 s Polarization time (estimation) R = 1e6 MIP cm-2 c-1 1MIP – 1e4 pairs CCE = 0.9 ntr = 1e4x(1-CCE)xR = 1e9 cm-2 c-1 tpol = ncr / ntr = 100 c Detector at: Vb = 1000V W = 500um Ncr = 1e12 cm-3 ncr = Ncr x W = 1e11cm-2 More details on polarization: B.Dezillie, et al. NIM A 452, 2000,p.440 V. Eremin, Bari, 29.05 – 1.06.12

  14. E(x) t = 0 x Electric field evolution in detectors under bulk polarization P+ N+ tpol = C*V / {I*(1-CCE)} + _ Neff(t) At Jbulk = 1e-9 A/cm2 tpol = < 1000c !!!! Critical for deep level rich semiconductors Critical time tcr V. Eremin, Bari, 29.05 – 1.06.12

  15. Electric field evolution in detectors under charge accumulation at the contacts Me Me tpol = C*V / {I*(1-CCE)} + _ Neff(t) At Jbulk = 1e-9 A/cm2 tpol = < 1000c !!!! Critical for the wide band semiconductor detectors with M-S-M structure E(x) t = 0 Critical time tcr x V. Eremin, Bari, 29.05 – 1.06.12

  16. Double side injection structures as a possible solution P+ N+ + E(n+) = E(p+) = 0 Neff(t) Critical condition: Injection at cryogenic temperatures. The best candidate – silicon P-I-N structure with higly doped contacts. E(x) t = 0 x V. Eremin, Bari, 29.05 – 1.06.12

  17. Comparison of Surface-barrier and P-I-N detectors Surface P+(boron) N+(phosphorus) Me Bulk Me Bulk Me S/B detector or M-S-M P-I-N V. Eremin, Bari, 29.05 – 1.06.12

  18. Electric field and potential at the detector entrance window Degenerate Silicon Si=Me V. Eremin, Bari, 29.05 – 1.06.12

  19. Conclusions Polarization could be a major drawback for Diamond and Silicon detectors operated at high counting rate at very low temperatures. The possible solution for Silicon detectors is a P-I-N structures with thin and abrupt highly doped contacts. For Diamond detectors the solution is not evident. The modules with optimized P-I-N structures must be studied with MIP’s laser simulator and in test beams of 2012. Thank you for your attention V. Eremin, Bari, 29.05 – 1.06.12

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