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Atomic Scale Understanding of Intermixing Behavior of Thin Metal Multlayer

Atomic Scale Understanding of Intermixing Behavior of Thin Metal Multlayer. Sang-Pil Kim, Jae-Young Park * , Seung-Cheol Lee, Yong-Jae Chung § , Chung-Nam Whang * and Kwang-Ryeol Lee Korea Institute of Science and Technology, Seoul, Korea § Hanyang University, Seoul, Korea

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Atomic Scale Understanding of Intermixing Behavior of Thin Metal Multlayer

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  1. Atomic Scale Understanding of Intermixing Behavior of Thin Metal Multlayer Sang-Pil Kim, Jae-Young Park*, Seung-Cheol Lee, Yong-Jae Chung§, Chung-Nam Whang* and Kwang-Ryeol Lee Korea Institute of Science and Technology, Seoul, Korea § Hanyang University, Seoul, Korea * Yonsei University, Seoul, Korea

  2. Devices with Thin Multilayers 1~2nm GMR Spin Valve Major materials issue is the interfacial structurein atomic scale

  3. Thin Film Growth Model (conventional)

  4. Calculation Methods Adatom (normal incident  0.1 eV) 300K Initial Temperature 300K Constant Temperature Fixed Atom Position • Co-Al EAM potential* • x,y-axis : Periodic Boundary Condition • z-axis : Open Surface • Deposition rate:1.306 × 10-1 nm/nsec • MD calc. step : 0.1fs R. Pasianot et al, Phys. Rev. B45, 12704 (1992). A. F. Voter et al , MRS Proc. 82, 175 (1987). C. Vailhe et al, J. Mater. Res. 12, 2559 (1997).

  5. Deposition in Co-Al System Co on Al (001) Al on Co (001)

  6. 3ML Al on Co(001) 3ML Co on Al(001) Asymmetry in Interfacial Intermixing

  7. Radial Distribution Function of Interface • CoAl compound layer of B2 structure was formed spontaneously.

  8. Atomic deposition behavior Co on Al(111) Al on Co(111)/(0001)

  9. 3ML Al on Co(001) 3ML Co on Al(001) Asymmetry in Interfacial Intermixing • Deposition at 300K • Initial kinetic energy 0.1eV

  10. Spin-Up B2 - CoAl HCP - Co Spin-Down Magnetic Properties of Co-Al system FCC - Al Spin resolved DOS

  11. Magnetic properties of Co-Al Thin Layer MOKE (Magneto-Optic Kerr effects) Capping layer (50Å) Capping layer (50Å) Capping layer (50Å) Co (30Å) Al (30Å) Co (30Å) Co (30Å) Cu buffer layer (1500Å) Al (840Å) Cu buffer layer (1500Å) Si substrate Si substrate Si substrate

  12. Capping layer (50Å) Co (30Å, 5Å) Cu buffer layer (1500Å) Si substrate Co Thickness Effect

  13. Capping layer (50Å) Al (30Å) Co (30Å) Cu buffer layer (1500Å) Co Si substrate Al Capping layer (50Å) Co (30Å) Al (840Å) Si substrate Effect of Coating Sequence Capping layer (50Å) Co (30Å) Cu buffer layer (1500Å) Si substrate Al

  14. How thick is the nonmagnetic (B2) interlayer? 5Å 7Å 30Å 10Å

  15. Thickness of B2 Layer : 3ML 3ML ~ 10Å

  16. Summary Co on Al Al on Co Asymmetry in interfacial intermixing was observed in both MD simulation and experiment.

  17. ¯ ¯ 2ML Al on Co(1120) B2-like on Co(1120) Nano-scale Sandwich Structure Co/B2/Co A Novel Process

  18. Acknowledgement Financial support from Core Capability Enhancement Program of KIST

  19. 3ML Al on Co(001) 3ML Co on Al(001) Asymmetry in Interfacial Intermixing • Deposition at 300K • Initial kinetic energy 0.1eV

  20. Kinetic Criteria for Intermixing Activation Barrier for Mixing Reaction Coordinate

  21. Co Al (1) (2) (3) (4) Kinetic Criteria for Intermixing Activation Barrier for Mixing Local Acceleration (1) 3.5eV (2) (3) (4) Reaction Coordinate

  22. Deposition in Co-Al System Co on Al Al on Co

  23. Co Al (1) (2) (3) (4) Kinetic Criteria for Intermixing Activation Barrier for Mixing Local Acceleration (1) 3.5eV (2) (3) (4) Reaction Coordinate

  24. Asymmetry

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