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CMOS Fabrication

CMOS Fabrication. By: Joaquin Gabriels November 24 th , 2008. Outline. Overview of CMOS CMOS Fabrication Process Overview CMOS Fabrication Process Problems with Current CMOS Fabrication Future Changes in CMOS Fabrication. What is CMOS?. Complementary metal–oxide–semiconductor ( CMOS )

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CMOS Fabrication

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  1. CMOS Fabrication By: Joaquin Gabriels November 24th, 2008

  2. Outline • Overview of CMOS • CMOS Fabrication Process Overview • CMOS Fabrication Process • Problems with Current CMOS Fabrication • Future Changes in CMOS Fabrication

  3. What is CMOS? • Complementary metal–oxide–semiconductor (CMOS) • Has many different uses: • Integrated Circuits • Data converters • Integrated transceivers • Image sensors • Logic circuits http://en.wikipedia.org/wiki/CMOS

  4. What is CMOS? NAND Circuit

  5. CMOS Fabrication ProcessOverview http://lsmwww.epfl.ch/Education/former/2002-2003/VLSIDesign/ch02/ch02.html

  6. CMOS Fabrication Process • Create a pattern. • Oxidize small layer, about 1µm thick. • Place photoresist on top of SiO2 • Place mask(pattern) above photoresist and expose it to UV light.

  7. CMOS Fabrication Process

  8. CMOS Fabrication Process

  9. CMOS Fabrication Process • Etch away SiO2 using HF acid or plasma. • Remove remaining photoresist with acids.

  10. CMOS Fabrication Process • To create a n well: • Diffusion • Heat wafer in Arsenic gas chamber until diffusion occurs. • Ion Implantation • Arsenic or phosphorous are implanted in window.

  11. CMOS Fabrication Process

  12. CMOS Fabrication Process • A thin layer of oxide is deposited. • A thin layer of polysilicon is deposited using Chemical Vapor Deposition (CVD) .

  13. CMOS Fabrication Process http://en.wikipedia.org/wiki/Chemical_vapor_deposition

  14. CMOS Fabrication Process • Remove oxide layer using acid. • Dope open area using Ion implantation or diffusion.

  15. CMOS Fabrication Process

  16. CMOS Fabrication Process

  17. Problems with Current CMOS Fabrication • Optical lithography is limited by the light frequency. • Material limitations • Yield limitations • Space limitations

  18. Future Changes in CMOS Fabrication • Material changes like using high-k materials. • Design changes • SOI(Silicon On Insulator) • Double Gate (Finfet) • Twin-Tub Process

  19. Future Changes in CMOS Fabrication

  20. Future Changes in CMOS Fabrication

  21. Future Changes in CMOS Fabrication http://www.fujitsu.com/downloads/MAG/vol39-1/paper02.pdf

  22. References • CMOS Digital Integrated Circuit Design - Analysis and Design by S.M. Kang and Y. Leblebici • http://www.fujitsu.com/downloads/MAG/vol39-1/paper02.pdf • “Introduction to VLSI Circuits and Systems,” John Wiley and Sons, 2002 • http://lsmwww.epfl.ch/Education/former/2002-2003/VLSIDesign/ch02/ch02.html • http://en.wikipedia.org/wiki/Chemical_vapor_deposition • users.ece.utexas.edu/~adnan/vlsi-05/lec0Fab.ppt • http://en.wikipedia.org/wiki/CMOS • www.usna.edu/EE/ee452/LectureNotes/02-_CMOS_Process_Steps/08_Simple_CMOS_Fab.ppt • http://en.wikipedia.org/wiki/Silicon_on_insulator • access.ee.ntu.edu.tw/course/VLSI_design_90second/data/Chapter%203%20Part2%2003-20-2002.doc

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