Fabrication Protocol SNG4951D

1. Fabrication ProtocolSNG4951D Responsible: Pradeep Co-responsible: Dirk Date of delivery: 3/30/2011

2. Sample Description A B • General remarks fabrication: • Height of pillars ~ 32 nm (3nm Ta/7nm Ru/10nm Cu/12nm CFB). • SiO2 buffer layer is ~60 nm around the pillar region. 1 2 32 nm 62 nm top electrode SiO2 pillar Flat bottom electrode SiO2 thickness around pillar Flat

3. Layout: 122110EBLpattern Allreticles have the same layout: • C-Site • Columns 1, 27 & 28 of C-sites are empty • A2-G2 & A26-G26 have 1 mm x 1 mm pillar • H2-N2 & H26-N26 have 2 mm x 2 mm pillar • Rest of the dice have the standard sized pillars • B-Site • Columns 1 & 28 of B-sites are empty • A2-G2 & A27-G27 have 1 mm x 1 mm pillar • H2-N2 & H27-N27 have 2 mm x 2 mm pillar • Rest of the dice have the standard sized pillars (only back electrode pattern shown)

4. Inspection - Description The inspection was carried out with: Optical microscope yes SEM yes, partly Legend:  Not inspected  No defect visible, probably usable Defect, probablyusable  Defect, probably not usable B Bottom electrode E Empty dice (without pillar) T Top electrode G Gold pad N Nanopillar (BN or TN: Bottom or top electrode around the nanopillar P Particle, dirt, residues etc. on die

5. Inspection – Reticles in C-sites

6. Inspection – Electrical characterization in C-sites SNG4951D.B2.C site – resistance between the top and bottom electrode

7. Inspection – Electrical characterization in C-sites SNG4951D.A2.C site – resistance between the top and bottom electrode

8. Probable defects on dice in C-structures There are some visible defect seen under optical microscope in the following reticle and dice: A2 –C1, J16, L2, H19 B1 – B15, M4 B2 – A2, F14, I24, E1, K20 A2.CH19 B1.CM4 Optical images of couple of dice with defects