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FIB at Glancing Angle of Incidence

PBS&T. Valery Ray vray@partbeamsystech.com. FIB at Glancing Angle of Incidence. Outline. Ion Sputtering @ Glancing Angle of Incidence Line Etching @ Glancing Angle Etch Enhancement @ Glancing Angle ? Directional Enhancement Experiment Volume and Depth Experiment

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FIB at Glancing Angle of Incidence

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  1. PBS&T Valery Ray vray@partbeamsystech.com FIB at Glancing Angle of Incidence FIB User Group ISTFA 2013 San Jose, CA

  2. Outline • Ion Sputtering @ Glancing Angle of Incidence • Line Etching @ Glancing Angle • Etch Enhancement @ Glancing Angle ? • Directional Enhancement Experiment • Volume and Depth Experiment • Bulk X-sectioning in Si example • References 9/16/2014 FIB User Group ISTFA 2013 San Jose, CA 2

  3. Ion Sputtering Yield at Glancing Angle X. Xu et. al.,JVST B 10(6), 1992 9/16/2014 FIB User Group ISTFA 2013 San Jose, CA 3

  4. Line Etching at Glancing Angle ISBN 0-9767985-1-4 9/16/2014 FIB User Group ISTFA 2013 San Jose, CA 4

  5. Rate Enhancement at Glancing Angle Up Slope Down Slope Down-slope enhancement may be possible by beam raster along the slope with relatively short dwell times and down-slope etch direction, so the material is removed in thin layers by multiple quick rasters. This enhancement mode was not tested yet. Up-slope enhancement may be possible by beam raster along the slope with relatively long dwell times and up-slope etch direction, so whole depth of the material is removed by a single raster. 9/16/2014 FIB User Group ISTFA 2013 San Jose, CA 5

  6. Directional Enhancement and Suppression Etching Beam: 5.7nA Dose: 5nC/um2 Etch Tilt: 30° 30um Etch Tilt: 0° Etch Tilt: 45° Imaging FOV: 50um Tilt: 45 Degrees Rotation: 90 Degrees 9/16/2014 FIB User Group ISTFA 2013 San Jose, CA 6

  7. Volume and Depth Experiment Etch Tilt: 0° Etch Tilt: 45° 9/16/2014 FIB User Group ISTFA 2013 San Jose, CA 7

  8. Bulk X - Section in Si by 2.3nA Beam ~ 30 Min. Etching ~ 1 Hr Etching 20um 20um 20x10um 4nC/um2 @ 60° 00:05:45 20x20um 3nC/um2 @ 45° 00:08:38 20x15um 3nC/um2 @ 30° 00:06:32 20x7.5um 5nC/um2 @ 15° 00:05:25 20x6um 6nC/um2 @ 0° 00:05:11 20x20um 21nC/um2 @ 0° 01:00:45 9/16/2014 FIB User Group ISTFA 2013 San Jose, CA 8

  9. Summary • Evaluated possibility of material removal by FIB at glancing angle of incidence • Suggested possible approaches for etching propagating up-slope and down-slope • Demonstrated possible application for enhancing throughput of FIB cross-sectioning 9/16/2014 FIB User Group ISTFA 2013 San Jose, CA 9

  10. References • X. Xu et. al.: “Focused Ion Beam Induced Deposition and Ion Milling as a Function of Angle of Ion Incidence” JVST B 10(6) 1992 • L. Gianuzzi: “Optimization of Nano-Machining with Focused Ion Beams” NSTI-Nanotech 2005, www.nsti.org, ISBN 0-9767985-1-4 Vol. 2, 2005 • S. Shim et. al.: “Effects of focused ion beam milling on the compressive behavior of directionally solidified micropillars and the nanoindentation response of an electropolished surface” Acta Materialia 57 (2009) 503–510 • “Focused Particle Beam Systems and Methods Using a Tilt Column” US Patent 6497194 • “Method and Apparatus for Rapid Material Removal by Beam of Energetic Particles” US Patent Application 61895794 9/16/2014 FIB User Group ISTFA 2013 San Jose, CA 10

  11. www.partbeamsystech.com FIB User Group ISTFA 2013 San Jose, CA

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