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1. The Process flow for fabrication the resister IC. Step I: The Beginning-Choosing a substrate Before actual wafer fabrication, we must choose the starting wafers. The major choices are the type (N or P), resistivity, and orientation.

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the process flow for fabrication the resister ic

1

The Process flow for fabrication the resister IC

Step I: The Beginning-Choosing a substrate

Before actual wafer fabrication, we must choose the starting wafers. The

major choices are the type (N or P), resistivity, and orientation.

In most IC circuits, the substrate has a resistivity in the range of 25-

50cm, which corresponds to a doping level on the order of 1015cm-3.

The other major parameter we need to specify in the starting substrate is

the crystal orientation. Virtually all modern silicon integrated circuits are manufactured today from wafer with a (100) surface orientation. The principal reason for this is that the properties of Si/Sio2 interface are significantly better when a (100) crystal is used.

Lecture # 2

slide4

3SiH4+4NH3Si3N4+12H2

Silicon nitride form a barrier against the impurities moving toward the

Si surface.

photolithography

4

Photolithography
  • In order to transfer resister information from the design to the wafer, a process known as photolithography is used.
  • For this process a material known as photoresist is first spread on the wafer. It is usually baked at about 100oC in order to drive off
  • solvants from the layer (photolithographic process will be covered in chapter 5 through.

Lecture # 2

slide8

P Well Formation

1016 -1017 cm-3

slide11

NMOS gate formation and adjusting VTH

The single most important parameter in the both NMOS

and PMOS devices is the threshold voltage

To adjust VTH , two terms that are important are the

doping concentration and the oxide capacitance.

slide13

Regrown of gate oxide

Why oxide layer is stripped and then regrown?

slide14

Deposition of polysilicon layer

SiH4 Si+2H2

Low ploy sheet resistivity and low gate resistance is required.

slide15

Selective Etching: to locate MOS gates

Selectivity and anisotropy are big deal hare

slide22

High temperature Drive-In

TED is a big issue hare!

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