1 / 11

SURFACE TRANSFORMATIONS AND GROWTH OF NANOCRYSTALS ON Au-COVERED GaAs and InP CRYSTALS

SURFACE TRANSFORMATIONS AND GROWTH OF NANOCRYSTALS ON Au-COVERED GaAs and InP CRYSTALS. Prof. Dr. Imre MOJZES MINAEST-NET TU Berlin/FhG-IZM, Berlin, Germany 22 April 2005. Participants. Imre Mojzes A , Sándor Kökényesi B , István A. Szabó C , Istvan Ivan B , Béla Pécz D

conway
Download Presentation

SURFACE TRANSFORMATIONS AND GROWTH OF NANOCRYSTALS ON Au-COVERED GaAs and InP CRYSTALS

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. SURFACE TRANSFORMATIONS AND GROWTH OF NANOCRYSTALSON Au-COVERED GaAs and InP CRYSTALS Prof. Dr. Imre MOJZES MINAEST-NET TU Berlin/FhG-IZM, Berlin, Germany 22 April 2005

  2. Participants • Imre MojzesA, Sándor KökényesiB, István A. SzabóC, Istvan IvanB, Béla PéczD • A – Budapest University of Technology and Economics, • Department of Electronics Technology • H-1111 Budapest Goldmann Gy. ter 3. • mojzes@ett.bme.hu • B –Debrecen University, Department of Experimental Physics • H-4026 Debrecen, Bem ter 18/a Hungary • kiki@tigris.klte.hu • C - Debrecen University, Department of Solid State Physics • H-4010 Debrecen POB 2 Hungary • aszabo@tigris.klte.hu • D – Institute of Technical Physics and Material Sciences • of the Hungarian Academy of Sciences • pecz@mfa.kfki.hu

  3. Abstract • We present a simple method of nanocrystal growth during the heating of Au-covered GaAs single crystals in a closed quartz ampoule. The process is the final stage of surface transformations in such crystals which include the disruption of initially continuous, 50 nm thick Au-layer and formation of Au-particle fractals in the relatively low 300-500 oC temperature range and a next step, when a variety of crystalline nanowires and even nanotubes grows on the crystal surface during the further short-period heating up to550-650 oC. These nanostructures were indentified by SEM and TEM measurements as -Ga2O3 and a nonstoichiometric arsenic oxide. It is supposed that the growth of few nanometer thick arsenic oxide tubes follows the vapour-solid mechanism, whereas the catalytic Au-metal growth of thicker -Ga2O3 nanowires was dominated by the vapor-liquid-solid mechanism.

  4. Roots • Interaction of gold based contacts with compound semiconductorsGaAs, InP, InAs, GaSb, InSb, GaP.. • InGaAlAs, GaAsP • GaAs microwave semiconductor devices

  5. Experimental • n – GaAs - 50nm Au • HEATINGquartz ampoule (10-3 torr, H2O, saturated As2)in SEM (high pumping rate) • GaAs, InP

  6. Steps • Sample preparation (Debrecen+Budapest) • Heat teratment (Debrecen) • SEM, HVTEM (Budapest)

  7. Results I. • GaAs/Au nanowires and nanotubs • InP/Au only nanowires

  8. Results II. • GaAs-Au

  9. Results III. • nanotubes

  10. Partners we need • Modelling • Electrical measurements on the nanowires and nanotubes • Application • Fractalmathematical investigations

  11. Contacts • Prof. Dr. Imre MOJZES •  Budapest University of Technology and Economics • Department of Electronics TechnologyH-1111 BudapestGoldmann Gy. T. 3. Bld. V2 255.mojzes@ett.bme.hu +36-1-463-2740

More Related