2009 PIDS Chapter Updates
This presentation is the property of its rightful owner.
Sponsored Links
1 / 2

2009 PIDS Chapter Updates Logic Ring-oscillator delay added. Fan-out = 1 and 4. PowerPoint PPT Presentation


  • 36 Views
  • Uploaded on
  • Presentation posted in: General

2009 PIDS Chapter Updates Logic Ring-oscillator delay added. Fan-out = 1 and 4. I sat of p -MOSFET added. Other parameters assumed symmetric. Subthreshold currents held constant independent of L gate /year. HP, LOP, LSTP = 100 nA / m m, 5 nA / m m, 50 pA / m m respectively.

Download Presentation

2009 PIDS Chapter Updates Logic Ring-oscillator delay added. Fan-out = 1 and 4.

An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -

Presentation Transcript


2009 pids chapter updates logic ring oscillator delay added fan out 1 and 4

2009 PIDS Chapter Updates

Logic

  • Ring-oscillator delay added. Fan-out = 1 and 4.

  • Isatof p-MOSFET added. Other parameters assumed symmetric.

  • Subthreshold currents held constant independent of Lgate/year.HP, LOP, LSTP = 100 nA/mm, 5 nA/mm, 50 pA/mm respectively.

  • Criterion for S/D parasitic resistance set for degradation of 33%.

    DRAM

  • Small cell factor–4F2 introduced in 2011.

  • DRAM product size 1 yr delay from ITRS 2007/2008 (4 Gb in 2011).

    NVM

    • Floating-gate to charge-trapping NAND flash transition in 2012, delay 2 yr.

    • 3 bit/cell – 4bit/cell transition delays 2 years, to 2012.

    • 3-D charge-trapping flash in 2014, delay 1 year.

    • STT (spin-torque-transfer) MRAM added.

      Reliability

  • Major revisions in the reliability requirement specifications.


2009 update nonvolatile memory

2009 Update: Nonvolatile Memory

  • NAND flash:

    • Half-pitch pulled-in 1 year from 2007/2008 Editions.


  • Login