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Chapter 17-2. MOSFET small-signal equivalent circuitPowerPoint Presentation

Chapter 17-2. MOSFET small-signal equivalent circuit

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Chapter 17-2. MOSFET small-signal equivalent circuit

Last class, we discussed the dc characteristics of MOSFETs. The dc characteristics for NMOS are reviewed below.

;

;

Saturation region

Linear region

MOSFET ac response

MOSFET ac response is routinely expressed in terms of small-

signal equivalent circuits. This circuit can be derived from the

two-port network shown below:

G

D

MOSFET

input

output

S

S

The input looks like an open circuit, except for the presence

of the gate capacitor.

At output, we have a current ID which is controlled by VG and VDS.

ID = f (VG, VDS )

MOSFET small-signal equivalent circuit

Any ac signal in VG or VDS will result in corresponding ac

variation in ID

and

where

gm = trans-conductance

gd = drain or channel conductance

Note: id,vg and vd are small-signal ac currents and voltages.

They are different from ID, VG and VDS which are dc currents

and voltages.

Small-signal equivalent circuit

So, the equivalent circuit at low-frequency looks like (neglecting the gate capacitance low frequency):

For high-frequency, we have to include the capacitive effects:

MOSFET small-signal parameters

When VDS < VDS,sat (i.e., below pinch-off or linear region)

When VDS > VDS,sat (i.e., above pinch-off or saturation region)

gd = 0

Note: the parameters depend on the dc bias, VG and VDS

Frequency response of MOSFET

The cut-off frequency fT is defined as the frequency when the

current gain is 1.

vGhere is ac signal

CGS is approximately equal to the

gate capacitance, Z L Cox

Input current =

Output current =

So, at fT,

So,

CG-VG characteristics: MOS-C versus MOSFET

CG vs. VG characteristics of a

MOSFET at high frequency looks similar to the low-frequency response (unlike the MOS-C). This is because, even at high frequency, the source and drain can supply the minority carriers required

for the structure to follow the ac fluctuations in the gate potential when the device is inversion biased.

CG vs. VG characteristics of a MOSFET with VDS = 0

Enhancement mode MOSFETs

The devices we discussed so far are called “enhancement-mode

MOSFETs.

For NMOS, VT is positive and one has to apply a positive gate

voltage to turn on the device. At zero gate voltage, the device

will be off.

For PMOS, VT is negative and one has to apply a negative gate

voltage to turn on the device. At zero gate voltage, the device

will be off.

Exercise: Draw the ID-VDS characteristics for NMOS and PMOS

enhancement-mode devices.

Next class, we will discuss depletion-mode devices.

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