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Temperature dependence of sensor leakage current

Temperature dependence of sensor leakage current. Junkichi Asai (RIKEN BNL Research Center) (Hiroki kanoh (Tokyo Institute of Technology)) VTX Meeting 6/1/2004. Contents Introduction Measurement Result Summary. Introduction. Silicon breaks by Radiation damage:

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Temperature dependence of sensor leakage current

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  1. Temperature dependence of sensor leakage current Junkichi Asai (RIKEN BNL Research Center) (Hiroki kanoh (Tokyo Institute of Technology)) VTX Meeting 6/1/2004 Contents Introduction Measurement Result Summary

  2. Introduction • Silicon breaks by Radiation damage: • dark current increases • Main part of dark current is leakage current depending on temperature: Increase dark current damage constant [A/cm] sensor Volume [cm3] radiation flux [/cm2] Temperature sensor constant Energy gap =1.2 boltzmann constant

  3. Setup • Silicon strip sensor : 1st prototype detector (2002 Nov : Test beam at KEK) Thickness: 400um Channel: 384x384 (sum : 768 strips) Back Currents Voltage Front Ammeter Voltage Sensor

  4. Model 6487 Picoammeter/Voltage Source(Keithley Instruments) Voltage : as high as 500V Currents : as low as 20fA • DAQ controlled by LabVIEW7 (programming by H. Kanoh) PC : Windows Connect : PCI-GPIB • Temperature and Humidity controlled chamber(ESPEC LHU-113) T: -20 to 85oC (%RH : 0 to 95%) Setup • device : Currents Front Back Sensor Voltage PC Chamber Chamber Ammeter Voltage PC Box Sensor

  5. Measuring condition • Sensor : In the chamber dark room keeping over 1day (for light sensitive) • IV measurement : bulk=768 strips (not channel by channel) Bias Voltage : 0 ~ 500V Current : max 2mA Temperature : -10 ~ 30 oC Humidity : 15% , 30%

  6. Leakage current [A] Bias Voltage [V] Humidity : 30% Result (temperature dependence)

  7. Result (temperature dependence) Bias Voltage 100V constant Leakage current [A] [k] -10 -5 0 5 10 15 20 25 30 [oC] Temperature Humidity : 30% Test beam @KEK : 80~90 V

  8. Result (humidity dependence) [A] Leakage current [A] Bias Voltage [V]

  9. Summary • RIKEN facility activity • Study temperature dependence of silicon leakage current • Silicon strip sensor : 1st prototype detector thickness 400um, 768 strips • Measurement : Bias Voltage 0~500 [V] temperature -10~30 [oC] Humidity 15, 30 [%] • Best operating temperature : 10oC, 15uA@100V

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