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Objective: inter-band optical transition in quantum dots (QD).

Optical Transitions in Realistic Quantum Dots: Fluctuations with Size. Objective: inter-band optical transition in quantum dots (QD). Can we get a local-optimized optical device through geometrical engineering of QD? Approach: Modify Fermi’s Golden rule for finite structure.

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Objective: inter-band optical transition in quantum dots (QD).

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  1. Optical Transitions in Realistic Quantum Dots:Fluctuations with Size • Objective: • inter-band optical transition in quantum dots (QD). • Can we get a local-optimized optical device through geometrical engineering of QD? • Approach: • Modify Fermi’s Golden rule for finite structure. • Compute the first momentum of light direction w.r.t. ground hole/electron WF. (WF Overlap) • Compute inter-band transition rate of the self-assembled InAs/GaAs QD with followings. • full spds* tight binding band model. • Valence Force Field model to compute strain and corresponding local polarization. • Result: • WF overlap acts as a key factor to estimate inter-band transition rate. • QD can be locally optimized through size-engineering. • Piezoelectricity doesn’t necessarily reduce the transition rate, as known in general. • InAs QD with GaAs Buffer. • ~ 8M atoms in the Delec • ~15M atoms in the Dstrain

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