Materials Science PV. Enn Mellikov. Solar cell. Polycrystalline Si. Tecturing of surface. Thin film solar cell.
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Cu(InGa)Se2-based solar cells have often been touted as being among the most promising of solar cell technologies for cost-effective power generation. This is partly due to the advantages of thin films for low-cost, high-rate semiconductor deposition over large areas using layers only a few microns thick and for fabrication of monolithically interconnected modules. Perhaps more importantly, very high efficiencies have been demonstrated with Cu(InGa)Se2 at both the cell and the module levels.
Electronic levels of intrinsic defects in CuInSe2. On the left side the theoretical values are presented and on the right side experimentally reported values are presented. The height of histogram columns on the right side represents the spread in experimental data.
Relative metal fluxes and substrate temperature for different coevaporation processes stivity
Deposition of CdS buffer layers on Cu(InGa)Se2 is generally made in an alkaline aqueous solution (pH> 9) of the following three constituents:
1. a cadmium salt; for example, CdS04, CdCl2, CdI2, Cd(CH3COO)2
2. a complexing agent; commonly NH3 (ammonia)
3. a sulphur precursor; commonly SC(NH2)2 (thiourea).
The lattice spacing of the (112) planes of CuIn1-xGaxSe2 and the (111) cubic or the (002) bexagonal planes of Cd1-xZnxS
Absorption of light with different wavelenghts in Cu(InGa)Se2 with x=0.2
Efficiency ( ) and Voc (•) as a function of Cu(InGa)Se2 band gap, varied by increasing the relative Ga content, The dashed line has slope ΔVoc/ ΔEg = 1