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Materials Science PV. Enn Mellikov. Solar cell. Polycrystalline Si. Tecturing of surface. Thin film solar cell.

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Presentation Transcript
slide6

Cu(InGa)Se2-based solar cells have often been touted as being among the most promising of solar cell technologies for cost-effective power generation. This is partly due to the advantages of thin films for low-cost, high-rate semiconductor deposition over large areas using layers only a few microns thick and for fabrication of monolithically interconnected modules. Perhaps more importantly, very high efficiencies have been demonstrated with Cu(InGa)Se2 at both the cell and the module levels.

slide11

Defect levels in CuInSe2

Electronic levels of intrinsic defects in CuInSe2. On the left side the theoretical values are presented and on the right side experimentally reported values are presented. The height of histogram columns on the right side represents the spread in experimental data.

slide13

Relative metal fluxes and substrate temperature for different coevaporation processes stivity

slide15

Chemical bath deposition

Deposition of CdS buffer layers on Cu(InGa)Se2 is generally made in an alkaline aqueous solution (pH> 9) of the following three constituents:

1. a cadmium salt; for example, CdS04, CdCl2, CdI2, Cd(CH3COO)2

2. a complexing agent; commonly NH3 (ammonia)

3. a sulphur precursor; commonly SC(NH2)2 (thiourea).

slide16

Choise of buffer layer materials

The lattice spacing of the (112) planes of CuIn1-xGaxSe2 and the (111) cubic or the (002) bexagonal planes of Cd1-xZnxS

slide20

Adsorbtsion of light

Absorption of light with different wavelenghts in Cu(InGa)Se2 with x=0.2

slide23

Parameters of solar cells

Efficiency ( ) and Voc (•) as a function of Cu(InGa)Se2 band gap, varied by increasing the relative Ga content, The dashed line has slope ΔVoc/ ΔEg = 1

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