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Quantum Mechanics in today’s world

Quantum Mechanics in today’s world. Tunneling Interference, Entanglement and Phase Coherence 3. Quantization and resonance 4. Macroscopic Quantum Coherence (Spins) 5. Charge Quantization 6. Quantum Stat Mech 7. Quantum Many-Body 8. QM and Free Will ?. 1. Electron Interference.

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Quantum Mechanics in today’s world

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  1. Quantum Mechanics in today’s world • Tunneling • Interference, Entanglement and Phase • Coherence • 3. Quantization and resonance • 4. Macroscopic Quantum Coherence (Spins) • 5. Charge Quantization • 6. Quantum Stat Mech • 7. Quantum Many-Body • 8. QM and Free Will ?

  2. 1. Electron Interference • Band-gap [Cancellation] • Interferometers [Oscillation]

  3. y+ y- -p/a p/a Why do we get a gap? y+ ~ cos(px/a) peaks at atomic sites y- ~ sin(px/a) peaks in between E Its periodically extended partner k

  4. y+ |U0| y- -p/a p/a Let’s now turn on the atomic potential The y+ solution sees the atomic potential and increases its energy The y- solution does not see this potential (as it lies between atoms) Thus their energies separate and a gap appears at the BZ This happens only at the BZ as we have propagating waves elsewhere k

  5. Interference signatures Magnetoconductance oscillations in an antidot lattice (Nihey et al, PRL 51, ‘95) Aharonov-Bohm interference in a nanotube (Dai group, PRL 93, 2004) Fano interference between a channel and a quantum dot Atom laser (Ketterle group) Yes! There are many examples of quantum interference

  6. Quantum computation schemes thrive on interference! Scheme of a Si-based quantum computer

  7. Small devices are better candidates forobserving quantum effects We must thus learn to transform matrices, paying special attention to their off-diagonal components

  8. 2. Tunneling Encyclopedia of Nanotechnology pp 2313-2321 Scanning Tunneling Spectroscopy Amadeo L. Vázquez de Parga , Rodolfo Miranda

  9. TunnelFETs Abrupt onset Problem: Low ION Heterojunction TFET Higher ION Problem: Traps High IOFF, voltage

  10. 3. Quantization and Resonance Chlorophyll Koning, Ross E. 1994. Light. Plant Physiology Information Website. http://plantphys.info/plant_physiology/light.shtml. (4-22-2016).

  11. Quantization and Resonance Heme binds oxygen This changes conformation of molecule This changes Fe(II) d6 orbital energy This shifts absorption to higher wavelengths Hemoglobin (Waterman ‘78) http://sites.sinauer.com/animalphys3e/boxex24.01.html

  12. Resonant Tunneling diode e1 e2

  13. Quantum of Resistance L ~ 10 nm G =(2q2/h) MT = (2q2/h) < vxD > Landauer drain source

  14. Landauer Equation EF + qV  L ~ 10 nm I =(2q2/h) MT dE  Landauer EF drain source THEORY EXPT (HRL)

  15. Quantum of Conductance G0 = 2q2/h = 77 mA/V EF + qV  I =(q/h) MT dE  EF M = 2, T = 1 EXPT Halbritter PRB ’04 < MT > G = dI/dV = (q2/h) Minimum resistance of a conductor (h/2q2 = 12.9 kW) Modified Ohm’s Law R = r(L + L0)/A

  16. Ohm’s Law for the 21st century L ~ 100s nm L > 1 mm L ~ 10 nm Resistor Waveguide drain source • Semiclassical Quantum Classical RQ =(h/q2MT) ROhm = L/sA M = hvD/L s = nq2t/m* T = l/(l+L)

  17. 70% of electrons in today’s FETs are ballistic • What does resistance even mean when you’re • ballistic? • How does scattering bring electrons back to • classical Drude’s Law? R = RQ + ROhm

  18. U UL UN Applied Laplace potential (e.g. Gate) CQ Neutrality potential CE Electrostatic capacitance quantum capacitance Quantum of Capacitance CQ =q2D The smaller capacitor wins C = CECQ/(CE+CQ)

  19. Si CMOS surges on

  20. .. Sometimes bafflingly so !

  21. Yet there is a crisis..

  22. .. including a fundamental one Pentium 2000, 50W/cm2; ~2025, 40MW/cm2 Based on Fundamental considerations alone ! P = ½aCV2f + IOFFV

  23. Moore’s law: Alive, but not kicking • Stopped scaling V, f (Dennard) • 18 months  2yrs  3 yrs • SRAM, contacts, oxides • not scaling well • Node isn’t feature size anymore ! Moore’s Law is about complexity / Performance per $$ Metric: Energy x Delay x log(error) x A • Grow in 3D, through Si vias - footprint • Hyperthreading, Multicore • Scale Wafer size P = ½aCV2f + IOFFV

  24. Moore’s law: Alive, but not kicking From Ralph Cavin, NSF-Grantees’ Meeting, Dec 3 2008

  25. Where do we go next? New Architecture: FinFETs, SOIs, DGMOSFETs, .. New Materials: Strained Si, III-V….. 2-D? New Switching Principles: Nanomagnetic, Neuromorphic (Short channel effects, Error rates) E Dt E Dt

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