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75 GHz 80 mW InP DHBT Power Amplifier. Y. Wei, M. Urteaga, Z. Griffith, D. Scott, S. Xie, V. Paidi, N. Parthasarathy, M. Rodwell. Department of Electrical and Computer Engineering, University of California, Santa Barbara.

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slide1

75 GHz 80 mW InP DHBT Power Amplifier

Y. Wei, M. Urteaga, Z. Griffith, D. Scott, S. Xie, V. Paidi, N. Parthasarathy, M. Rodwell.

Department of Electrical and Computer Engineering,

University of California, Santa Barbara

yunwei@ece.ucsb.edu 1-805-893-8044 IMS2003 June 2003, Philadelphia, PA

slide2

UCSB

IMS2003

W-band MMIC power Amplifiers

Yun Wei

  • Applications for electronics in 75-110 GHz frequency band
    • Wideband communication systems, Atmospheric sensing, Automotive radar
  • 2 stage 94 GHz 0.15 m InP HEMT power amplifier: Pout= 316 mW
  • Y.C.Chen et. Al. IPRM, May 1999
  • Cascode 78 GHz InAlAs SHBT power amplifier:Pout= 12 mW
  • J. Guthrie et. Al, IPRM, May 2000
  • Single stage 85 GHz InP DHBT power amplifiers: Pout= 40 mW
  • Y. Wei et. Al, IMS, June 2002
  • This work
  • Single stage 75 GHz HBT power amplifiers: Pout= 80 mW
  • Transferred substrate InP/InGaAs/InP DHBT

Highest Reported Power for HBTs in W-band

slide3

M. Urteaga

Transferred substrate HBT technology

UCSB

IMS2003

Yun Wei

ε=2.7

Gains are high at 220 GHz, but fmax can’t be extrapolated

slide4

Submicron transferred-substrate HBTs and amplifier

UCSB

IMS2003

Yun Wei

InAlAs/InGaAs TS HBTs: 0.3 m Three-stage amplifier designs: 8.5 dB gain at 195 GHz,M. Urteaga GaAs IC 2002

InP TS DHBT: AE=0.4 x 7.5 m2, AC=1.0 x 8.75 m2, JC=1.8 mA/m2, VBR,CEO = 8 V

fmax = 460 GHz, ft = 139 GHz, S. Lee DRC2002

slide5

Transferred substrate power HBT and amplifier (IMS2002)

UCSB

IMS2003

Yun Wei

8 x ( 1 mm x 16 mm emitter )8 x ( 2 mm x 20 mm collector ) Vbr_ceo>7 V, Imax=130mA

f0=85 GHz, BW3-dB=28 GHz, GT=8.5 dB

P1-dB=14.5 dBm, Psat=16dBm

slide6

UCSB

Thermal instability in power HBTs

IMS2003

Yun Wei

f1

f2

f3

f4

Ic

4-emitter-finger

HBT topology

Jc

Multiple finger thermal instability- Current Hogging

Long finger thermal instability

HBT thermal stability factor

slide7

LDE doping level must not limit maximum current density

LDE resistance

UCSB

Long emitter ballasting: Lightly doped emitter expitaxy

IMS2003

Yun Wei

Ti/Pt/Au

emitter contact

InGaAs 1x1019, 300 Å

emitter cap

InGaAs/InAlAs

2x1019, 90 Å

grade

InP 5x1016, 1000 Å

LDE emitter

Band profile

Bias at Vbe=0.7 V, Vce=1.5 V

InP 8x1017, 300 Å

emitter

* un=2000cm2/V.S

1 4 amp 220 ghz f max inp power dhbt

UCSB

1/4 Amp, 220 GHz fmaxInP Power DHBT

IMS2003

Yun Wei

8 x ( 1 mm x 24 mm emitter )8 x ( 2 mm x 28 mm collector )~8 Ohm ballast per emitter finger fmax>230 GHz VBR_CE>7 V Imax=250mA

192 mm2 common base LDE DHBT

IE step=50 mA

Optimum load bias condition

Ic=140 mA, Vce=3.7 V

slide9

UCSB

Amplifier Design

IMS2003

Yun Wei

  • Common-base, optimum load match
  • 8dB gain, 21 dBm output power
  • self-developed multi-finger large signal HBT model with thermal effects
  • electromagnetic simulation of all passive elements (Agilent Momentum)
slide10

UCSB

IMS2003

Amplifier Measurements

Yun Wei

Small signal measurement

  • f0=75 GHz, GT=5.6 dB
  • P1-dB=18 dBm, Psat=19 dBm @ 4dB gain
  • Device dimensions:
    • Emitter area: 1x16x16=256 m2
    • Collector area: 2x20x16=640 m2
  • Device bias conditions:
    • Ic=130 mA, Vce=4.5 V

Large signal measurement

Die size: 0.38 mm  0.89 mm

conclusions

UCSB

Conclusions

IMS2003

Yun Wei

  • Demonstrated Wideband Power DHBT: Ic_max> 240 mA, Vce_BR>7 V, fmax=300 GHz
  • Wideband Power amplifiers: f0=75 GHz, GT=5.6 dB, Psat=19dBm
  • Multi-finger emitter ballasting scheme provides direction for future high power and high frequency MMIC work in transferred-substrate process
  • Future work
  • Multi-stage wideband high power amplifiers
  • ~200 GHz power amplifiers
  • Acknowledgements
  • This work is funded by ARO-MURI program under contract number PC249806.