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Semiconductor Device and Processing Technology. Course Tutor Dr R E Hurley. Northern Ireland Semiconductor Research Centre School of Electrical & Electronic Engineering The Queen’s University of Belfast. Semiconductor Device and Processing Technology. 5 . Processing in the real world.
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Semiconductor Device and Processing Technology Course Tutor Dr R E Hurley Northern Ireland Semiconductor Research Centre School of Electrical & Electronic Engineering The Queen’s University of Belfast
Semiconductor Device and Processing Technology 5. Processing in the real world. ‘Front-end’ and ‘Back-end’ Wafer Fab. Industrial Wafer Fab. Research Lab. A look at the equipment
The ‘Wafer Fab’ (The Front-end processes) • Fabrication - a series of 16-24 (?) loops, each puts a layer on the device. A loop comprises some or all of the major steps of photolithography, etch, strip, diffusion, ion implantation, deposition, and chemical mechanical planarization. • Inspections and measurements performed to monitor the process and equipment at every stage.
The ‘Wafer Fab’ (The Front-end processes) • Supporting the entire process is a complex infrastructure of materials supply, waste treatment, support, logistics,and automation. • Cleanest environment in the world - many times cleaner than the best hospital operating theatre. • A state-of-the-art Fab, costing over $1 billion (+?), has a denser capital per square foot than any industry.
The ‘Wafer Fab’ (The Back-end processes) • The “Back-end" is Test, Assembly and Packaging. • Finished wafer is split up into individual die (chips) • Assembled into packages which can be handled in the final applications. • Full functional electrical test is performed at both wafer and package level to ensure outgoing quality.
Main Fab Lab at QUB, Belfast UHV Cluster tool ‘Clean’ measurements Cleaning & wet chemistry Furnaces Photolith
More about processes- Furnaces Tube 1: Diffusion. Tube 2: Annealing. Tube 3: oxidation. Tube 4: Special! Quartz tubes surrounded by heaters carefully designed to maintain even heating along length (regular calibration needed!) Bruce Furnace Bruce Industrial Inc.
More Furnaces Tempress (QUB) Tube 1: Diffusion. Tube 2: Annealing. Tube 3: Oxidation. Tube 4: Smart-cut ASM (QUB)
Rapid thermal anneal (RTA) • Halogen lamps surround the wafer and deliver a heat-pulse to reform silicon lattice. • The method controls the ‘thermal budget’. • Dopant-diffusion controlled in depth. Nitrogen or vacuum environment. QUB systems made in University.
Deposition- CVD Plasma Enhanced Chemical Vapor Deposition (PECVD) PlasmaLab Model DP800 SiO2, SiOxNy, and Si3N4films.
Deposition- CVD UHV for high purity (SiGe, copper) Cluster tool 3 chambers fed by ‘dealer arm’ with load-lock to load 150mm wafers Main central chamber
Deposition- CVD UHV for high purity (SiGe, copper) Overhead gas-box Satellite chambers
Processes – Plasma Etching • Planar Etch II (PE2) is a parallel-plate plasma etcher. O2 used to ash organic contaminants.(e.g. remove hardened photoresist • For SU-8 5: • 200 W, 10 sccm O2 flow : 300 nm/min)
Processes – Dry Reactive Etching Reactive Ion Etcher Anelva RIE DEM-451 Anelva Corporation STS
Processes - Etching Trion RIE/ICP - (Trion Technology Minilock Phantom III RIE/ICP) Inductively coupled plasma (ICP) RF → lower pressure, higher etch-rate, higher anisotropy (straighter sided trenches)
Baking and curing processes need ovens Clean Oven Model: Ultra-Clean 100 (3497M-3) Manufacturer: Lab-Line Instruments Photoresist, dehydration, spin-on-glass. 250-3000C max, with 1.50C uniformity Fisher Isotemp Vacuum Oven Model 281 Max temperature 300 C Minimum Pressure -92 kPa
Cleaning station with spin-dry and bonder QUB Spin-dryer Wafer bonder Ultrasonics
Wet chemical bench Fume extraction Perspex cover Acids! HF, nitric etc.
Film thickness measurement EllipsometerGaertner Scientific Corporation Model No. 1169-AK Thickness and index of refraction for thin dielectric films
Metrology (measurements) Four probes that can serve as voltage sources, current sources, voltage monitors, and current monitors. I-V curve of a simple two terminal device, Id-Vds-Vg graphs for MOSFETs, switching characteristics of logical gates, etc.
Film thickness measurement • Film thickness from 100 to 500,000 Å • A diffraction-grating based spectrometer measuring reflectance of films from 370 to 800nm wavelengths. • Extrapolates thickness using known refractive index for film material and silicon substrate. Nanospec AFT Model 210
Alpha-Step Vertical ranges of: 1000Å, 2500Å, 5000Å, 10kÅ, 25kÅ, 50kÅ, 100kÅ, 250k, 500kÅ and 1000kÅ Leveling (Auto, Manual) Scan Length: 3mm (Manual mode), 2.5mm (Automatic) Resolution: 50 Å ProfilometerModel: Alpha-step 200 Manufacturer: Tencor Instruments Step-height on thin films
A good selection of microscopes is important! Leica DM LB 100T
OPEN-DAY at NISRC, QUB, Belfast Students from schools visit the microelectronics group