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2007 ITRS Emerging Research Materials April 25, 2007. Michael Garner – Intel Daniel Herr – SRC. 2006/7 ERM Participants. Bob Allen IBM Yuji Awano Fujitsu Daniel-Camille Bensahel STM Chuck Black BNL Ageeth Bol IBM

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2007 itrs emerging research materials april 25 2007

2007 ITRSEmerging Research MaterialsApril 25, 2007

Michael Garner – Intel

Daniel Herr –SRC

2006 7 erm participants
2006/7 ERM Participants

Bob Allen IBM

Yuji Awano Fujitsu

Daniel-Camille Bensahel STM

Chuck Black BNL

Ageeth Bol IBM

George Bourianoff Intel

Alex Bratkovski HP

William Butler U. of Alabama

John Carruthers Port. State Univ.

Zhihong Chen IBM

U-In Chung Samsung

Rinn Cleavelin TI

Hongjie Dai Stanford Univ.

Jean Dijon LETI

Joe DeSimone UNC

Satoshi Fujimura TOK

Michael Garner Intel

Emmanuel Giannelis Cornell


Joe Gordon IBM

Jim Hannon IBM

Craig Hawker UCSB

Rudi Hendel AMAT

Susan Holl Spansion

Dan Herr SRC

Jim Hutchby SRC

Antoine Kahn Princeton Univ.

Sergie Kalinin ORNL

Ted Kamins HP

Masashi Kawasaki Tohoku Univ.

Roger Lake U.C. Riverside

Steve Knight NIST

Gertjan Koster Stanford Univ.

Louis Lome IDA Cons.

Francois Martin LETI

Andrew Millis Columbia Univ.

Bob Miller IBM

Chris Murray IBM

Raravikar Nachiket Intel

Paul Nealey U. Wisc.

We-Xin Ni NNDL

Dmitri Nikonov Intel

Chris Ober Cornell Univ.

Ramamoorthy Ramesh U.C.


Mark Reed Yale Univ.

Dave Roberts Air Products

Francis Ross IBM

Sadasivan Shankar Intel

Lars Samuelson Lund


Mitusru Sato TOK

John Henry Scott NIST

Atsushi Shiota JSR

Kaushal K. Singh AMAT

Susanne Stemmer UCSB

Curt Richter NIST

Shinichi Tagaki U of Tokyo

Koki Tamura TOK

Evgeny Tsymbal U. of Nebraska

Emanuel TutucIBM

John Unguris NIST

Vijay Wakharkar Intel

Kang Wang UCLA

Rainer Waser Aacken Univ.

C.P. Wong Ga Tech. Univ.

H.S. Philip Wong Stanford


Hiroshi Yamaguchi NTT

Toru Yamaguchi NTT

In Kyeong Yoo Samsung

Victor Zhirnov SRC

emerging research materials
Emerging Research Materials
  • Develop ERM Chapter (2007)
    • Goal: Identify critical ERM technical and timing requirements
    • Consolidated Materials Research Requirements for:
      • University & Gov’t Researchers (Chemist, Materials Scientist, etc)
      • Industry Researchers
        • Semiconductor
        • Chemical, Material, & Equipment Suppliers
    • Align ERM Requirement to TWG Needs
    • Workshops to Assess ERM Properties & Research Directions
erm matrix
ERM Matrix

Detailed TWG Requirements

General TWG Interest to Date

No TWG Interest to Date

erm scope
ERM Scope
  • Cross Cutting Materials designed to address specific roadmap issues
  • Low Dimensional Nanomaterials
  • Macromolecules
  • Directed Self Assembly
  • Strongly Correlated Electron State Materials
  • Hetero-structures & interfaces
  • Spin Materials
  • Environment Safety & Health
  • Identify Research Needs For:
    • Synthesis
    • Metrology
    • Modeling
emerging research materials workshop timetable
Emerging Research Materials Workshop Timetable
  • Low Dimensional Nanomaterials Completed
    • Devices, Interconnect, Package, FEP, Litho
  • Macromolecules Completed
    • Litho, FEP, Packages, Devices
  • Strongly Correlated Electron State Materials
    • ERD Completed
  • Directed Self Assembly Completed
    • Litho, Interconnects, FEP, ERD
  • ESH (Feb’07) Completed
  • Hetero-structures & Interfaces Completed
    • ERD, Interconnects, FEP, Package
  • Ferromagnetic Semiconductors (May ’07)
emerging research devices
Emerging Research Devices

Device StateMaterials

  • 1D Charge State (Low Dimensional)
  • Molecular State (Macromolecule)
  • Spin State (Spin Materials, SCEM)
  • Polarization State (Heterointerfaces)
  • Resistance State (Heterointerfaces)
  • Phase State (SCEM & Heterointerfaces)

SCEM= Strongly Correlated Electron State Materials

All Devices have critical interface requirements

1d charge state materials

Carbon Nanotube FET

1D Charge State Materials
  • Control of doping is a challenge for both nanotubes & nanowires

Source Intel

Atomically smooth


(L. Samuelson, Lund Univ.)

  • Nanotube Challenges
  • Control of Location &
  • Orientation
  • Control of Bandgap
  • Contact Resistance

Group IV & III-V

Grow in 111 Orientation

Catalyst determines location

(T. Kamins, el. Al., HP)

molecular state
Molecular State
  • Molecular Transport shows Tunneling & Hopping vs band transport
  • Metal-molecule potential barrier is high & the contact is very sensitive to hybridization
    • High fields in the barrier may dominate potential molecular conduction
  • Molecule & CNT contacts appear to have low transport barriers
    • p electrons in plane have low barrier to transport
  • Contact resistance in Molecules & Nanotubes increases with sigma bonding character; i.e. s bonding character; and p orbital misalignment for non-tunneling systems
  • Clean metal interfaces appear to form a dipole layer on organic materials
spin state
Spin State

Overlapping Bound Magnetic Polarons, Coey, Nature 2005

Room temperature



(T curie)

Carrier mediated exchange

  • Need an accepted methodology for validating carrier mediated exchange
    • Gated test structures
  • Transport across interfaces depends on band symmetry
    • Physical disruption of symmetry can degrade transport
    • Consider size and strain effects on spin orbital splitting
    • Assess candidate material families, such as chalcopyrites

Need Room Temp FM Semiconductor


Phase State & Heterostructures



  • Materials exhibit complex phase relationships
    • Structure, Strain, Spin, Charge, Orbital Ordering
  • Goal: Determine whether complex phases and coupled dynamic and static properties have any potential to enable alternate state logic devices

Can these materials enable new device functions?






2D Electron Gas at SrTiO3-LaAlO3 Interface

RHEED excited Cathodoluminescence

Critical thickness

J. Mannhart et. al. 2006

Augsburg Univ.

Oxygen Vacancies

D. Winkler, et. al. 2005

  • Candidate materials include complex transition metal oxides

Early results must be understood & validated


Macromolecular Architectures

Resist: Unique Properties

  • Immersion: Low leaching & low surface energy
  • EUV: Low outgassing, high speed & flare tolerant

Imprint Materials

  • Low viscosity
  • Easy Release

Directed Self Assembly

  • Density, Size, Defects, LER, Shapes, & Alignment

Molecular Glass & PAGS

R. Allen, IBM

R. Allen, IBM

Polymer Design

Ober, Cornell


Di-block Copolymer self assembly

P. Nealey, U. Wisc.

potential fep applications
Potential FEP Applications

For Extreme CMOS

  • Directed Self Assembly for Deterministic Dopant Placement
  • Self Assembly for Selective Etch
  • Macromolecules for Selective Etch & Cleaning
potential interconnect applications
Potential Interconnect Applications


  • Multi & single walled CNT
  • Metal nanowires
  • Higher density
  • Contact Resistance
  • Adhesion


  • Metallic CNTs
  • Metallic Nanowires
  • Alignment
  • Contact Resistance

Y. Awano, Fujitsu

H. Dai,

Stanford Univ.

E-Field Align100Volts

Quartz Crystal Step Alignment


4 Die Stack

4 Die Stack with Large Overhang

  • Package Electrical & Thermo-Mechanical
  • Substrate: Nanoparticles, Macromolecules
  • Polymers & Molding Compound: Nanoparticles & macromolecules
  • Adhesives: Macromolecules, nanoparticles
  • Chip Interconnect: Nanotubes & nanosolders

High Density Power Delivery Capacitors

Dielectrics: High K

Self Assembly

Interconnects: Nanotubes or Nanowires

  • Researchers need to perform hazard & risk assessment on new materials
    • Establish handling practiced based on risk levels
  • Hierarchy of assessment based on maturity of materials application & hazard research
  • Integrate ESH factors into materials design
metrology modeling
Metrology & Modeling
  • Metrology
    • Low dimensional material properties (Mapping)
    • Correlation of nanostructure to macro properties
    • Imbedded interface characterization
    • Nanostructure characterization of low z materials
  • Modeling Materials & Interfaces
    • Deterministic dopant placement effect on electrical properties
    • Nanomaterial synthesis & properties
    • Self assembled materials structures & their properties & defects
    • Heterointerface electronic & spin transport properties & 2D effects
  • Metrology & modeling must be able characterize & predict performance & reliability
difficult challenges
Difficult Challenges
  • Characterization of the nanostructure to property correlation
  • Control of Nanostructure & Properties
  • Self Assembly control of structure, defect, registration
  • Identifying critical properties for alternate state devices & their interfaces
  • Characterizing electronic & spin properties of embedded interfaces/matrixes
  • Assessment of potential ESH hazards and risk of ERM
  • Aligning Requirements with TWGs
  • Developing Tables
  • Most Workshops Completed
  • Scope refined based on TWG applications