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6/20 期末考方式

6/20 期末考方式. 題目 : ( 四擇一 ) Wet clean process - DIW tank clean efficiency improve - 如何以流場或機械力方式提升洗淨能力 Dry etch process - 如何避免 wafer or parts arcing - 如何降低天線效應或減少 parts 曝露在 plasma 中 提出能夠 real time 監控 chamber 內 微粒 (particle) 的方式 - 要有原理 / 量測方法

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6/20 期末考方式

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  1. 6/20 期末考方式 • 題目: (四擇一) • Wet clean process - DIW tank clean efficiency improve - 如何以流場或機械力方式提升洗淨能力 • Dry etch process - 如何避免 wafer or parts arcing - 如何降低天線效應或減少 parts 曝露在 plasma 中 • 提出能夠 real time 監控 chamber 內 微粒 (particle) 的方式 - 要有原理 / 量測方法 • Lithography process - 如何減少地震對 scanner 的 impact - 如何以機構設計來減少共振 • 分組方式 : • 以 PPT格式撰寫, ,頁數至少10頁, 首頁要有分工說明 • 6/18 前mail 給助教, 當日需展示投影片 • 當日以抽籤方式安排 6 組上台報告, 每組15min (自願者全組加5分) • 課後依紙本報告評分 • 提示: • 請以量化或建立Model 型式(以何理論依據) 探討, 不要只以定性描述

  2. Wet Clean DIW tank clean efficiency improve

  3. Dry etcher Wafer / parts arcing prevention

  4. SampleReal time particle monitor method

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