MOSFET Transistors in Microelectronic Circuit Design

1. Chapter 4Field-Effect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock Microelectronic Circuit Design McGraw-Hill

2. Depletion-Mode MOSFETS • NMOS transistors with • Ion implantation process used to form a built-in n-type channel in device to connect source and drain by a resistive channel • Non-zero drain current for vGS=0, negative vGS required to turn device off. Microelectronic Circuit Design McGraw-Hill

3. Transfer Characteristics of MOSFETS • Plots drain current versus gate-source voltage for a fixed drain-source voltage Microelectronic Circuit Design McGraw-Hill

4. Enhancement-Mode PMOS Transistors: Structure • P-type source and drain regions in n-type substrate. • vGS<0 required to create p-type inversion layer in channel region • For current flow, vGS< vTP • To maintain reverse bias on source-substrate and drain-substrate junctions, vSB <0 and vDB <0 • Positive bulk-source potential causes VTP to become more negative Microelectronic Circuit Design McGraw-Hill

5. Enhancement-Mode PMOS Transistors: Output Characteristics • For , transistor is off. • For more negative vGS, drain current increases in magnitude. • PMOS is in triode region for small values of VDS and in saturation for larger values. Microelectronic Circuit Design McGraw-Hill

6. MOSFET Circuit Symbols • (g) and(i) are the most commonly used symbols in VLSI logic design. • MOS devices are symmetric. • In NMOS, n+ region at higher voltage is the drain. • In PMOS p+ region at lower voltage is the drain Microelectronic Circuit Design McGraw-Hill

7. Process-defining Factors • Minimum Feature Size, F : Width of smallest line or space that can be reliably transferred to wafer surface using given generation of lithographic manufacturing tools • Alignment Tolerance, T: Maximum misalignment that can occur between two mask levels during fabrication Microelectronic Circuit Design McGraw-Hill

8. Mask Sequence for a Polysilicon-Gate Transistor • Mask 1: Defines active area or thin oxide region of transistor • Mask 2: Defines polysilicon gate of transistor, aligns to mask 1 • Mask 3: Delineates the contact window, aligns to mask 2. • Mask 4: Delineates the metal pattern, aligns to mask 3. • Channel region of transistor formed by intersection of first two mask layers. Source and Drain regions formed wherever mask 1 is not covered by mask 2 Microelectronic Circuit Design McGraw-Hill

9. Basic Ground Rules for Layout • F=2 L • T=F/2=L, L could be1, 0.5, 0.25 mm, etc. Microelectronic Circuit Design McGraw-Hill

10. Internal Capacitances in Electronic Devices • Limit high-frequency performance of the electronic device they are associated with. • Limit switching speed of circuits in logic applications • Limit frequency at which useful amplification can be obtained in amplifiers. • MOSFET capacitances depend on operation region and are non-linear functions of voltages at device terminals. Microelectronic Circuit Design McGraw-Hill

11. NMOS Transistor Capacitances: Triode Region Cox” =Gate-channel capacitance per unit area(F/m2). CGC =Total gate channel capacitance. CGS= Gate-source capacitance. CGD =Gate-drain capacitance. CGSO and CGDO = overlap capacitances (F/m). Microelectronic Circuit Design McGraw-Hill

12. NMOS Transistor Capacitances: Triode Region (contd.) CSB = Source-bulk capacitance. CDB = Drain-bulk capacitance. ASand AD = Junction bottom area capacitance of the source and drain regions. PS and PD = Perimeter of the source and drain junction regions. Microelectronic Circuit Design McGraw-Hill

13. NMOS Transistor Capacitances: Saturation Region • Drain no longer connected to channel Microelectronic Circuit Design McGraw-Hill

14. NMOS Transistor Capacitances: Cutoff Region • Conducting channel region completely gone. CGB = Gate-bulk capacitance CGBO = gate-bulk capacitance per unit width. Microelectronic Circuit Design McGraw-Hill

15. SPICE Model for NMOS Transistor Typical default values used by SPICE: Kn or Kp = 20 mA/V2 g = 0 l= 0 VTO = 1 V mn or mp= 600 cm2/V.s 2FF = 0.6 V CGDO=CGSO=CGBO=CJSW= 0 Tox= 100 nm Microelectronic Circuit Design McGraw-Hill

16. Exam 1 • HW 1-3 solutions will be posted on website. • Exam 1 is on Tuesday September 17 (6:30-7:30 pm) at EE 129. The exam 1 covers Semiconductor Materials, Diodes, Bipolar Junction Transistors. Field-effect Transistors will not be tested. The exam 1 has 20 questions with multiple choices and heavy calculation like HW1-3. It is 60 minutes (close-book). You are not allowed to look at textbooks, class-notes, etc. by the exam. You are allowed and must use calculator. All "complicated" equations will be given. The exam questions are same as another session since we have the same syllabus. . • I have a special helping time for you to prepare the test. I will have open office hours on Monday (9/21) 2:00pm-5:00pm and Tuesday (9/22) 2:00pm-5:00pm to help you prepare for the exam. Please also use the TAs and Help room as much as possible to prepare your exam. Microelectronic Circuit Design McGraw-Hill