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100 100 nm 2 1V, 0.8nA

T=200K 1.6ML = 0.8BL F= 6 10 -3 ML/s. Ag. Ag. NiAl(110). 100 100 nm 2 1V, 0.8nA. QUANTUM SIZE EFFECTS IN LATTICE-MATCHED AG THIN FILMS. QSE are now recognized to have a remarkable effect in guiding film growth morphologies in

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100 100 nm 2 1V, 0.8nA

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  1. T=200K 1.6ML = 0.8BL F= 610-3 ML/s Ag Ag NiAl(110) 100100 nm21V, 0.8nA QUANTUM SIZE EFFECTS IN LATTICE-MATCHED AG THIN FILMS QSE are now recognized to have a remarkable effect in guiding film growth morphologies in a variety of Ag thin film systems: Ag/GaAs(110) & GaP(110), Ag/Fe(100), Ag/i-AlPdMn, etc. Initial Bilayer-by-Bilayer Growth of Ag(110) on NiAl(110) @ 200 K In this work [1], supported in part by the CMSN on “Surface-based Nanostructures”, we have performed a detailed analysis of QSE in Ag films for judiciously selected lattice-matched thin film systems: Ag/NiAl(110), Ag/NiAl(100). These systems are ideal for high-level DFT analysis of supported films where interface structure can be accurately and realistically treated. Results elucidate the observed initial bilayer-by-bilayer growth of Ag/NiAl(110) shown in the STM image on the right. They also enable predictions for growth modes in the Ag/NiAl(100) system. Beyond this, such DFT results for the key surface energetics provide critical input to KMC simulations of atomistic models which can fully describe and elucidate novel growth morphologies [2]. Unal, Qin, Han, Liu, Jing, Jenks, Evans, Thiel, PRB 76 (2007) 195410. [1] Y. Han, J.W. Evans, and D.-J. Liu, Surf. Sci. (2008) submitted. [2] Y. Han, B. Unal, F. Qin, D. Jing, C.J. Jenks, D.-J. Liu, P.A. Thiel, and J.W. Evans, Phys. Rev. Lett. 100 (2008) 116105.

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