1 / 2

Enhanced Performance of Short-Period MQWs LEDs with Variably Thick InGaN Wells

This study investigates the optoelectrical characteristics of short-period multiple quantum wells (MQWs) light-emitting diodes (LEDs) featuring thickness-fluctuated InGaN wells. By implementing ramped H2 in the GaN barrier spacer layer, we created a random distribution of well thickness variations. Our findings indicate that these short-period MQWs LEDs not only exhibit improved output power but also significantly reduce efficiency droop compared to traditional long-period MQW LEDs. This advancement shows promise for more efficient LED technologies.

stella
Download Presentation

Enhanced Performance of Short-Period MQWs LEDs with Variably Thick InGaN Wells

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Conclusion • We demonstrated the optoelectrical characteristics of short- period MQWs LEDs with thickness-fluctuated InGaN well. • Well thickness variation randomly distributed in the InGaNwell could be created by introducing ramped H2 in the GaN barrier spacer layer. • Well short-period MQWs LEDs with thickness-fluctuated InGaN well improved output power and decreased efficiency droop compared with traditional long-periodMQW LEDs.

  2. References • H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Appl. Phys. Lett., vol. 79, pp. 215–217, 2001. • N. Sharma, P. Thomas, D. Tricker, and C. Humphreys, “Chemical mapping and formation of V-defects in InGaN multiple quantum wells,” Appl. Phys. Lett., vol. 77, pp. 1274–1276, 2000. • 李宗憲, “有機金屬化學氣相沉積法成長氮化銦薄膜之特性研究,”July. 2006.

More Related