1. A novel method of stress modification in highly lattice matched III-Nitrides/SiFatemeh Shahedipour-Sandvik, SUNY at Albany, DMR 0904929 Recently we have demonstrated the possibility for substantial stress reduction in highly mismatched III-Nitride overgrown on Si. Our recent finding, as was hypothesized previously, shows that a combination of AlN island size and substrate engineering (via ion implantation though AlN into Si) work together to achieve lower stress. As shown on the right, stress evolution is substantially different for two samples with and without substrate engineering. We have now shown that AlN island size plays a crucial role, however ion implantation seems to be a necessary step. This is significant as it may enable development of dislocation reduced and creak-free III-Nitride devices on Si, simultaneously, without the use of multiple processing steps. This, in turn will reduce manufacturing cost and enables technologies that benefit from high functionalities of both III-Nitrides and Si. Stress-curvature after 0.3 micron of overgrown GaN becomes tensile in unimplanted sample, whereas it continues to be compressive and then remains in a free-stress state for the implanted/engineered sample during high temperature growth. XRD results show reduction in total threading dislocation density in engineered sample.

2. Training of the Next Generation of Scientists and EngineersFatemeh Shahedipour-Sandvik, SUNY at Albany, DMR 0904929 Broader impact of this project continues to be multi-faceted. We have continued our public outreach by investing time to educate the public through offering hands-on experiments including a recent module on nano-enabled solar energy offered at a 4-weeks CNSE/Girls Inc. workshop in summer of 2012. In addition, of great importance is that our undergraduate intern, Sheila Smith who has been with us for the last 1.5 years has won the Barry Goldwater scholarship. She is one of only 300 nationwide. Sheila will continue to do her Capstone research in our group. Also, our highschool intern, Seyoon Lee who was with us for three years was one of only 300 INTEL semi-finalist in 2012. Impacted by his training in our group Seyoon decided to continue his education in Materials Science and Engineering and will attend the University of Pennsylvania. Sheila Smith, right, a UAlbany CNSE Nanoengineering sophomore student loads a sample into a dual focused ion beam (FIB) scanning electron microscope system with guidance from F. Shadi Shahedipour-Sandvik, a CNSE associate professor of Nanoengineering in a laboratory at the CNSE campus on Monday, April 2, 2012 in Albany, NY. Smith has received the Barry Goldwater scholarship for top science undergrad in country.* *http://www.timesunion.com/business/