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Semiconductors with Lattice Defects

Semiconductors with Lattice Defects. All defects in the perfect crystal structure (i.e. real structure phenomena) produce additional energy levels for electrons, which are often located in the energy gap. Non-stoichiometric composition Substitutional defects (impurities on lattice sites)

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Semiconductors with Lattice Defects

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  1. Semiconductors with Lattice Defects All defects in the perfect crystal structure (i.e. real structure phenomena) produce additional energy levels for electrons, which are often located in the energy gap • Non-stoichiometric composition • Substitutional defects (impurities on lattice sites) • Vacancies • Substoichiometric • Schottky defects (migration of atoms to the crystal surface) • Interstitial defects • Hyperstoichiometric • Frenkel defects (atoms leaves their lattice site, creating vacancies and becoming interstitials in the immediate environment, Frenkel pair = vacancy + interstitial) • Crystal and crystallite boundaries • Dislocations • Incomplete ordering of the crystal Donator Acceptor P, As (5e-) B, Al, Ga (3e-) within Si, Ge (4e-) Concentration of impurities  10-6

  2. Doped (extrinsic) Semiconductors Additional „conduction electrons“ (with P, As) Additional holes (with Ba, Al, Ga) p-type semiconductors with electron acceptors (B, Al, Ga) n-type semiconductor with electron donors (P, As)

  3. Fermi Energy in Doped Semiconductors n-type semiconductor At 0K the Fermi energy is located between the new energy band and E0. At high temperatures, the Fermi energy approaches the value , as in intrinsic semiconductors. Largest differences in electrical properties are expected at low temperatures (< 400K). In p-type semiconductors, the temperature dependency is reversed

  4. Number of Charge Carriers (per units of volume) and Electrical Conductivity Small concentration of impurities • Large concentration of impurities • (b) Small concentration of impurities

  5. The Hall Effect Semiconductor (or metal) within an external magnetic field Without magnetic field: The concentration of electrons along the y-direction is homogeneous Within a magnetic field: The movement of electrons is affected by the Lorentz force, causing a non homogeneous distribution of electrons along the y-direction and the formation of an electric field Lorentz force: Hall force: Equilibrium: Hall constant: The sign of Hall constant is different for n and p.

  6. The IV, III-V and II-VI Semiconductors IV Si: Fd3m, a = 5,430 Å Ge: Fd3m, a = 5,657 Å III-V GaAs: F-43m, a = 5,653 Å GaAs: P63mc, a = 3,912 Å, c = 6,441 Å InAs: F-43m, a = 6,056 Å GaSb: F-43m, a = 6,095 Å InSb: F-43m, a = 6,487 Å GaN: P63mc, a = 3.189 Å, c = 5.185 Å II-VI CdTe: F-43m, a = 6,481 Å

  7. The IV, III-V and II-VI Semiconductors C: Fd3m, a = 3.567 ÅGe: Fd3m, a = 5.657 Å Si: Fd3m, a = 5.430 Å-Sn: Fd3m, a = 6.489 Å GaAs: F-43m, a = 5.653 Å InAs: F-43m, a = 6.056 Å InSb: F-43m, a = 6.487 ÅGaP: F-43m, a = 5.450 Å SiC: F-43m, a = 4.358 Å ZnO: P63mc, a = 3.254 Å, c = 5.210 ÅCdSe: P63mc, a = 4.297 Å, c = 7.007 Å

  8. Energy gap vs. lattice parameter

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