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University of Illinois Optical and Discharge Physics PowerPoint Presentation
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University of Illinois Optical and Discharge Physics

University of Illinois Optical and Discharge Physics

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University of Illinois Optical and Discharge Physics

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  1. ETCH PROFILES IN SOLID AND POROUS SiO2 • Porous SiO2 is being investigated for low-permittivity dielectrics for interconnect wiring. • In polymerizing environments with heavy sidewall passivation, etch profiles differ little between solid and porous silica. • The “open” sidewall pores quickly fill with polymer.  Position (m)  Position (m)  Porosity = 45 % Pore radius = 10 nm ANIMATION SLIDE  Solid University of Illinois Optical and Discharge Physics UTA_1102_36

  2. EFFECT OF PORE RADIUS ON CLEANING • Larger pores have poor view angles to ions and thicker polymer layers. • Lower rate of cleaning results. 4 nm 16 nm • Ar/O2=99/1, 40 sccm, 600 W, 4 mTorr University of Illinois Optical and Discharge Physics ANIMATION SLIDE GEM_0204_28

  3. CLEANING INTERCONNECTED PORES • Cleaning is inefficient with interconnected pores. • Higher interconnectivity leads to larger shadowing of ions. 100% 0% 60% • Interconnectivity • Ar/O2=99/1, 40 sccm, 600 W, 4 mTorr University of Illinois Optical and Discharge Physics ANIMATION SLIDE GEM_0204_29

  4. MIN MAX POLYMER SURFACE STRUCTURES Animation Slide  The avalanche exposes the tubules to a burst of hot electrons, unevenly charging surfaces. Ion fluxes are also uneven.  Electron density  Electron Temperature • N2/O2/H2O =79.5 / 19.5 / 1, 1 atm, 15 kV, 2.5 ns University of Illinois Optical and Discharge Physics GEM_0204_41

  5. MIN MAX RESOLVING POLYMER SURFACE STRUCTURES  The avalanche exposes the tubules to a burst of hot electrons, unevenly charging surfaces. Ion fluxes are also uneven.  M+ density  Charge density Animation Slide • N2/O2/H2O =79.5 / 19.5 / 1, 1 atm, 15 kV, 2.5 ns University of Illinois Optical and Discharge Physics GEM_0204_42