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V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine. Athens, 11 April 2008. ISP was established in 1960. The staff of our Institute includes now 785 employee s : ▪ 2 Academician s ▪ 9 Corresponding Members of NASU

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V. Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine


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v lashkaryov institute of semiconductor physics national academy of sciences of ukraine

V. Lashkaryov Institute of Semiconductor Physics NationalAcademy of Sciences of Ukraine

Athens, 11 April 2008

slide2

ISP was established in 1960

The staff of our Institute includes now

785 employees:

▪2 Academicians

▪9 Corresponding Members of NASU

▪88 Doctors of Sciences (Habilitated)

▪204 Candidates of Sciences (Ph.D.)

slide3

The areas of fundamental investigations and scientific-technical works

▪physics of semiconductors and semiconductor devices;

▪ semiconductor materials science;

▪ optics and spectroscopy;

▪ optoelectronics;

▪ sensorics;

▪ diagnostics and certification of semiconductor materials;

▪ infrared photoelectronics;

▪ liquid-crystal and electroluminescence facilities for displays;

▪ high-temperature electronics;

▪ semiconductor solar power engineering

slide4

6

Multichannel Optical RotatingConnector

7

5

1

3

4

2

9

8

10

Applications:

▪ in optical communication systems with rotating components

▪ radar antenna equipment

▪ wide angle azimuth field of view scanning systems in visible and IR

Designed for the non-contacting transferring of broadband digital signals to and from a rotating body

slide6

Technologicalsystem for helio-welding

Parameters of solar battery

Open-circuit voltage, V 40,0

Short-circuit current, A 5,5

Operating voltage, V36,0

Operating current, A5,0

Peak power, W 180

Weight (together with orientation system), kg 20

Number of solar battery modules 10

Coefficient of module efficiency, % 12-14

slide8

Diode Temperature Sensors DTS-100

Diode Temperature Sensors DTS-1

The sensors have provide most reliable and accurate measurements for the objects, which are operating under extreme conditions

Minimized influence of self-heating and noise, enhanced sensitivity in low temperature range, accuracy and reproducibility.

powder electroluminescent indicators
Powder electroluminescent indicators
  • Average brightness is 50-60 Candle/m2 at 150V and 400 Hz
  • Based on screen printing and roll technology
  • Price ~ 50-80$/m2
slide10

Semiconductor silicon carbide technology

This technology provides amorphous and polycrystalline silicon carbide with grain sizes from 0.02 up to 5 mm. The main impurity is nitrogen with the concentration <1017 cm-3. The basic application is a source of materials for growing single crystals

infrared imager
INFRARED IMAGER

The portable infrared imager is designed for detection of thermal (infrared) radiation, subsequent processing of the signal and its real-time visualization on the built-in LCD display or external monitor.

Inflammation

Blood circulation

Contactless and intrusionless detection of inflammations, blood circulation anomalies and other pathologies, particularly in oncology (breast cancer, thyroid gland cancer), traumatology, gynaecology, post-operation complications control.

slide13

Ecological monitoring and nondestructive control:

Detection of thermal losses of buildings, pipelines, monitoring of moving engine parts, control of fire-risk areas, etc.

qadrexed dimension 3000 nanoscope iiia scanning probe microscope

C-AFM

Fluid cell

SCM

Force modulation

STM

NanoIndentor

AFM

Qadrexed Dimension 3000 NanoScope IIIa Scanning probe microscope

Nanosensors for various methods of tip spectroscopy:

C-AFM –conducting AFM; SCM – scanning capacitance m; Fluid c.- for study of fluids, STM – scanning tunelling m.; Force modulation – for the mapping of surface elastic properties