'Type silicon' presentation slideshows

VLSI Technology

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Detectors for particles and radiation Advanced course for Master students

Detectors for particles and radiation Advanced course for Master students. Spring semester 2010 S7139 5 ECTS points Tuesday 10:15 to 12:00 - Lectures Tuesday 16:15 to 17:00 - Exercises. Detectors for particles and radiation. Particle-matter interactions: review.

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Wafer Fabrication

Wafer Fabrication. Nam Nguyen Todd Allen Dipesh Chasmawala Daniel Canales Inoke Hemaloto Cheng Hsiao. Overview (1/3). Crystal Structure Monocrystalline An existing monocrystalline silicon serves as a seed for uniform crystal growth Polycrystalline

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Activity 1 : Introduction to CCDs.

Activity 1 : Introduction to CCDs. Simon Tulloch smt@ing.iac.es. In this activity the basic principles of CCD Imaging is explained. What is a CCD ?. Charge Coupled Devices (CCDs) were invented in the 1970s and originally found application as

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BIONIC EYE

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Schottky Barrier Diode

Schottky Barrier Diode. One semiconductor region of the pn junction diode can be replaced by a non-ohmic rectifying metal contact.A Schottky contact is easily formed on n -type silicon. The metal region becomes the anode. An n + region is added to ensure that the cathode contact is ohmic.

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Introduction to MOS Transistors

Introduction to MOS Transistors. Section 6.1-6.4 Selected Figures in Chapter 15. Outline. Review of NMOS Introduction of PMOS Application of CMOS in Digital Circuits Small Signal Model. Introductory Device Physics. A Crude Metal Oxide Semiconductor (MOS) Device. V2 causes movement

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Qualitative Discussion of MOS Transistors

Qualitative Discussion of MOS Transistors. Big Picture. ES230 Diodes BJT Op-Amps ES330 Applications of Op-Amps CMOS Analog applications Digital applications. A Crude Metal Oxide Semiconductor (MOS) Device. V2 causes movement of negative charges, thus current. V1 can control the

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COMSATS Institute of Information Technology Virtual campus Islamabad

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26th APEC EGNRET April 4, 2006 Auckland, New Zealand

26th APEC EGNRET April 4, 2006 Auckland, New Zealand. Private Sector Activities in Domestic New and Renewable Energy Technologies in Japan. Hiroyuki Kato- Deputy Director Ken Johnson- Advisor. Takahiro Yamada Assistant Chief. NEDO International Projects Management Division. METI

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Integrated Circuit Processing

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Summary: 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

Summary: 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies). M. Lozano 1 , G. Pellegrini 1 , G. Casse 2 1- CNM-IMB (CSIC) Barcelona, Spain 2- University of Liverpool, UK. Some numbers. 14-16 April 2008 at Barcelona 51 attendants from 11 countries

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Mara Bruzzi 1 and Michael Moll 2 1 INFN Florence, Italy 2 CERN- PH-DT2 - Geneva - Switzerland

85 meeting of the LHCC, 21 November 2007. RD50 STATUS REPORT 2007 Development of radiation hard sensors for very high luminosity colliders. on behalf of RD50. Mara Bruzzi 1 and Michael Moll 2 1 INFN Florence, Italy 2 CERN- PH-DT2 - Geneva - Switzerland. OUTLINE. The RD50 collaboration

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Comprehensive Radiation Damage Modeling of Silicon Detectors

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Section 8: Metallization

Section 8: Metallization. Jaeger Chapter 7. Multilevel Metallization. Multilevel Metallization Components. FOX. Si substrate. ( InteMetal Oxide e.g. BPSG. Low-K dieletric). (e.g. PECVD Si Nitride). Interconnect RC Time Delay. Interconnect Resistance R I =R/L = ? / (W Al T Al ).

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Components

Components. Cells, Modules and arrays. Except where otherwise noted these materials are licensed Creative Commons Attribution 4.0 (CC BY).

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Solar Power

Solar Power. By Francis. How does S olar P anels work?.

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Goldstein, 1992

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