Tcad simulation - PowerPoint PPT Presentation

Ranjeet Center for Detector &amp; Related Software Technology (CDRST)

TCAD Simulation of Geometry Variation under HPK campaign. Ranjeet Center for Detector &amp; Related Software Technology (CDRST) Department of Physics and Astrophysics, University of Delhi (DU), Delhi, INDIA On behalf of Si Sensor Simulation Group. TCAD Simulation vs. Measurement

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TCAD Simulation Semiconductor Technology Computer-Aided Design (TCAD) tool

2013/9/2 HSTD9-ID54. Potential in bulk, 2D display. p-stop. Silicon avalanche breakdown voltage ~300 kV/cm. n + -Implant. n + -Implant. Location of bias voltage breakdown in n-in-p silicon segmented sensors with p-stop structure before and after irradiation. Backplane (-200 V).

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Tcad simulation - PowerPoint PPT Presentation

Ranjeet Center for Detector &amp;amp; Related Software Technology (CDRST)

TCAD Simulation Semiconductor Technology Computer-Aided Design (TCAD) tool

Ranjeet Center for Detector & Related Software Technology (CDRST)