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Formation of Ge Quantum dots by Selective Oxidation of SiGe alloys for Single-Electron Devices

11min. 15min. 20min. 25min. Ge pileup along the SiO2/Si interface. Unconsumed Si. Buried Oxide. Formation of Ge Quantum dots by Selective Oxidation of SiGe alloys for Single-Electron Devices P. W. Li, W. M. Liao, S. W. Lin, P. S. Chen 1 , S. C. Lu 1 , and M. J. Tsai 1

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