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Near ir slab lasers - PowerPoint PPT Presentation

PHOTOEPITAXY Making atomically perfect thin films under milder and more controlled conditions

PHOTOEPITAXY Making atomically perfect thin films under milder and more controlled conditions. Mullin and Tunnicliffe 1984 Et 2 Te + Hg (pool) + H 2 (h ? , 200 o C) ? HgTe + 2C 2 H 6 MOCVD preparation requires 500 o C using Me 2 Te + Me 2 Hg Advantages of photo-epitaxy

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Near ir slab lasers - PowerPoint PPT Presentation

PHOTOEPITAXY Making atomically perfect thin films under milder and more controlled conditions