'Materials departments university' presentation slideshows

Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth

Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth. Uttam Singisetti*, Man Hoi Wong, Sansaptak Dasgupta, Nidhi, Brian Swenson, Brian Thibeault, Jim Speck, and Umesh Mishra ECE and Materials Departments University of California, Santa Barbara, CA

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