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Interface roughness scattering in ultra-thin GaN channels in N-polar enhancement-mode GaN MISFETs

Interface roughness scattering in ultra-thin GaN channels in N-polar enhancement-mode GaN MISFETs. Uttam Singisetti*, Man Hoi Wong, Jim Speck, and Umesh Mishra ECE and Materials Departments University of California, Santa Barbara, CA 2011 International Symposium on Compound Semiconductors

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469 views • 20 slides

Uttam Singisetti*, Man Hoi Wong, Jim Speck, and Umesh Mishra ECE and Materials Departments

Vertically scaled 5 nm GaN channel Enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm g m and 0.76 W -mm R on. Uttam Singisetti*, Man Hoi Wong, Jim Speck, and Umesh Mishra ECE and Materials Departments University of California, Santa Barbara, CA 2011 Device Research Conference

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450 views • 20 slides

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Interface roughness scattering in ultra-thin GaN channels in N-polar enhancement-mode GaN MISFETs

Uttam Singisetti*, Man Hoi Wong, Jim Speck, and Umesh Mishra ECE and Materials Departments