'Flat band' presentation slideshows

What Jo Did

What Jo Did. Compiled by: Terry Sams PES. Written and Illustrated by: Charles R. Smith, Jr. Summary.

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Flat band s uperfluidity and q uantum m etric

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Novel Orbital Phases of Fermions in p -band Optical Lattices

Novel Orbital Phases of Fermions in p -band Optical Lattices. Congjun Wu. Department of Physics, UC San Diego. Fermions: W. C. Lee, C. Wu, S. Das Sarma, to be submitted. C. Wu, PRL 101, 168807 (2008). C. Wu, PRL 100, 200406 (2008) .

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EE 5340 Semiconductor Device Theory Lecture 25 - Fall 2010

EE 5340 Semiconductor Device Theory Lecture 25 - Fall 2010. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. Ideal 2-terminal MOS capacitor/diode. conducting gate, area = LW. V gate. -x ox. SiO 2. 0. y. 0. L. silicon substrate. t sub. V sub. x.

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6.4.3 Effect of real surfaces

6.4.3 Effect of real surfaces. Departure from the ideal case is due to Work function difference between the doped polysilicon gate and substrate The inevitably charges at the Si-SiO 2 interface and within the oxide. Work function difference.

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6.4.3 Effect of real surfaces

6.4.3 Effect of real surfaces. Departure from the ideal case is due to Work function difference between the doped polysilicon gate and substrate The inevitably charges at the Si-SiO 2 interface and within the oxide. Work function difference.

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EE 5340 Semiconductor Device Theory Lecture 23 - Fall 2010

EE 5340 Semiconductor Device Theory Lecture 23 - Fall 2010. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. Gummel-Poon Static npn Circuit Model. Intrinsic Transistor. C. R C. I BR. B. R BB. I LC. I CC - I EC = {IS/Q B }* { exp(v BE /NFV t )-exp(v BC /NRV t )}.

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Semiconductor Device Modeling and Characterization EE5342, Lecture 23 Spring 2003

Semiconductor Device Modeling and Characterization EE5342, Lecture 23 Spring 2003. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Discussion of IC-CAP Parameter Extraction Lang. Download and bring a copy of: http://www.uta.edu/ronc/neff.txt

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Semiconductor Device Modeling and Characterization EE5342, Lecture 22 Spring 2003

Semiconductor Device Modeling and Characterization EE5342, Lecture 22 Spring 2003. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Ideal 2-terminal MOS capacitor/diode. conducting gate, area = LW. V gate. -x ox. SiO 2. 0. y. 0. L. silicon substrate. t sub. V sub.

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Chapter 4. MOS Systems

Chapter 4. MOS Systems. Total 3 hours. The Adventure of Carriers.

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Semiconductor Device Modeling and Characterization EE5342, Lecture 19 -Sp 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 19 -Sp 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Ideal 2-terminal MOS capacitor/diode. conducting gate, area = LW. V gate. -x ox. SiO 2. 0. y. 0. L. silicon substrate. t sub. V sub. x.

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BUST OF PHILIP THE ARAB

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BUST OF PHILIP THE ARAB

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