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Thermal diffusion, Ion implantation

Thermal diffusion, Ion implantation. sami.franssila@aalto.fi. Doping: modifying resistivity. Gas phase diffusion Solid source diffusion Ion implantation e.g. POCl 3 gas e.g. boron-doped film 20-200 keV ions at 1000 o C at 1000 o C at room temperature

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FEASABILITY OF SIMULATED SCATTERING ON A SCANNING GANTRY FOR PROTON RADIATION THERAPY

FEASABILITY OF SIMULATED SCATTERING ON A SCANNING GANTRY FOR PROTON RADIATION THERAPY. Silvan Zenklusen Prof. Andr é Rubbia, Doktorvater; Prof. Ralph Eichler, Co-refferent, ETHZ Eros Pedroni, Ph.D., and David Meer, Ph.D., Supervisors, PSI and the whole CPT team, PSI.

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476 views • 23 slides

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