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ECSE-6290 Semiconductor Devices and Models II Lecture 7

ECSE-6290 Semiconductor Devices and Models II Lecture 7

ECSE-6290 Semiconductor Devices and Models II Lecture 7. Prof. Shayla Sawyer Bldg. CII, Rooms 8225 Rensselaer Polytechnic Institute Troy, NY 12180-3590 Tel. (518)276-2164 Fax. (518)276-2990 e-mail: sawyes@rpi.edu. June 2, 2014. June 2, 2014.

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675 views • 46 slides
Semiconductor Device Modeling and Characterization EE5342, Lecture 19 Spring 2003

Semiconductor Device Modeling and Characterization EE5342, Lecture 19 Spring 2003

Semiconductor Device Modeling and Characterization EE5342, Lecture 19 Spring 2003. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. The base current must flow lateral to the wafer surface Assume E & C cur-rents perpendicular.

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396 views • 29 slides
80GHz Modulator Designs

80GHz Modulator Designs

80GHz Modulator Designs. Ian Harrison School of Electrical and Electronic Engineering University of Nottingham UK Work done at Department of ECE University of California, Santa Barbara USA. Special thanks PK, Zak, Mattias for fabrication of circuits and devices Miguel for advice

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343 views • 27 slides

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358 views • 22 slides
Instructor ： Po-Yu Kuo 教師 ： 郭柏佑

Instructor ： Po-Yu Kuo 教師 ： 郭柏佑

EL 6033 類比濾波器 ( 一 ). Analog Filter (I). Instructor ： Po-Yu Kuo 教師 ： 郭柏佑. Lecture5: Voltage References (2). Outline. Introduction Performance Requirements Zener Diode Voltage Reference Bandgap Voltage References Bandgap Voltage References Implemented in CMOS technologies.

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588 views • 21 slides
Common-Base Amplifier

Common-Base Amplifier

Common-Base Amplifier. Common-Base Amplifier. Response of CB Stage to small Input Change. Input Impedance. Application of CB Stages. Response to a Source of Finite Source Resistance. Output Impedance. Input Impedance. General CB. (VA=infinity, RB>0).

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Lecture #26

Lecture #26

OUTLINE Modern BJT Structures Poly-Si emitter Heterojunction bipolar transistor (HBT) Charge control model Base transit time Reading: Finish Chapter 11, 12.2. Lecture #26. Modern BJT Structure. Narrow base n+ poly-Si emitter Self-aligned p+ poly-Si base contacts

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SiGe Chapter5 Dynamic characteristic 5-1 Intuitive picture 5-2 Charge Modulation effects

SiGe Chapter5 Dynamic characteristic 5-1 Intuitive picture 5-2 Charge Modulation effects

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117 views • 11 slides

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