'Ballistic transport' presentation slideshows

Spin currents in non- collinear magnetic tunnel junctions and metallic multilayers

Spin currents in non- collinear magnetic tunnel junctions and metallic multilayers. Peter M Levy New York University, USA. Background to TMR. Long before GMR per se was discovered, there existed, by 1972, another

693 views • 54 slides

Department of Electrical, Computer and Information Technology Islamic Azad University of Qazvin

Department of Electrical, Computer and Information Technology Islamic Azad University of Qazvin Subject: presentation an article Student:Framarz aghaei Master:Dr . Dr. Shah- Hosseini.

687 views • 49 slides

Scanning Probe Microscopy- Application beyond Imaging Nanofabrication

660 views • 44 slides

Consider Evolution of a system when adiabatic theorem holds

Adiabatic theorem and Berry phase. Consider Evolution of a system when adiabatic theorem holds (discrete spectrum, no degeneracy, slow changes). 1. 1. To find the Berry phase, we start from the expansion on instantaneous basis.

626 views • 39 slides

IRG2: Mesoscopic Narrow Gap Systems

IRG2: Mesoscopic Narrow Gap Systems. Investigators: Doezema, McCann, Mullen, Murphy, Santos, Shi, Yang (OU); Xie (OSU); Salamo (UA); 6 postdocs/8 graduate students

475 views • 36 slides

Simulation of Heavy Ion Beam Propagation

Simulation of Heavy Ion Beam Propagation. D. R. Welch and D. V. Rose Mission Research Corporation, Albuquerque NM C. L. Olson Sandia National Laboratories Simon Yu Lawrence Berkeley National Laboratory P. F. Ottinger Naval Research Laboratory Presented at the ARIES Project Meeting 6-7-01.

421 views • 33 slides

Spin Dependent Electron Transport in Nanostructures

631 views • 28 slides

Helium, dust and frequencies

Helium, dust and frequencies. Recent improvements in SimpleX2. Chael Kruip Jan -Pieter Paardekooper Vincent Icke. Introduction to SimpleX2. Unstructured (adaptive) Voronoi -Delaunay grid Point density scales with opacity of the medium

326 views • 23 slides

Delay and Power analysis of carbon nanotube interconnects for VLSI Application

501 views • 21 slides

388 views • 19 slides

Influence of gate capacitance on CNTFET performance using Monte Carlo simulation

290 views • 18 slides

Ballisticity of the Linear response Transport in Nanometric Silicon Devices

EIT4. Ballisticity of the Linear response Transport in Nanometric Silicon Devices. C. Jungemann Institute for Electronics Bundeswehr University Neubiberg, Germany. Outline. Introduction Theory Results for 40nm N + NN + structure High bias Zero bias Conclusions. Introduction.

253 views • 16 slides

Analysis of Strained-Si Device including Quantum Effect

IWCE-10 October 24-27, 2004, Indiana USA. Analysis of Strained-Si Device including Quantum Effect. Fujitsu Laboratories Ltd. Ryo Tanabe Takahiro Yamasaki Yoshio Ashizawa Hideki Oka E-mail : tanabe.ryou@jp.fujitsu.com. Background. z. y. x. tensile strain. tensile strain.

213 views • 14 slides

Simulation of defect cluster static states and free carrier trapping dynamics

TCAD simulation of Si crystal with different clusters. Ernestas Zasinas, Rokas Bondzinskas, Juozas Vaitkus Vilnius University. Simulation of defect cluster static states and free carrier trapping dynamics. The TCAD Synopsis program was used for:

284 views • 11 slides