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Three dimensional patterned MgO substrates ~ fabrication of FZO nanowire structure~. Tanaka Lab. Yasushi F ujiwara. Contents. Introduction of k eyword 3d transition metal oxide & FZO Magnetic domain and magnetic domain wall Constricted ferromagnetic nanowire structure

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tanaka lab yasushi f ujiwara

Three dimensional patterned

MgO substrates

~ fabrication of FZO nanowire structure~

Tanaka Lab. Yasushi Fujiwara

contents
Contents
  • Introduction of keyword
    • 3d transition metal oxide & FZO
    • Magnetic domain and magnetic domain wall
    • Constricted ferromagnetic nanowire structure
    • Nano processing procedure for metal oxides
  • My research
    • Sidewall growth method & Fabrication process
    • Anneal condition
    • Three dimension MgOnanowire structure
    • Structure analysis by TEM
    • MgO growth mechanism
  • Conclusion
contents1
Contents
  • Introduction of keyword
    • 3d transition metal oxide & FZO
    • Magnetic domain and magnetic domain wall
    • Constricted ferromagnetic nanowire structure
    • Nano processing procedure for metal oxides
  • My research
    • Sidewall growth method & Fabrication process
    • Anneal condition
    • Three dimension MgOnanowire structure
    • Structure analysis by TEM
    • MgO growth mechanism
  • Conclusion
3d transition metal oxide 3d

Fe

Al

O

Si

3d transition metal oxide(3d遷移金属酸化物)

Strongly-correlated electron systemVariety of function

Spinel structure

(強相関電子系)

Fe3+

Control of carrier concentrate

Fe3-xZnxO4(FZO)

Ti

O2-

Fe2+

V

PRB. 76 205108(2007)

Cr

Ferromagnetic at roomtemperature

and high spin polarization

High temperature

superconduction

YBa2Cu3O7

Ferroelectric

BaTiO3

Ferromagnetic

Fe3O4,Fe3-xZnxO4

Metal-Insulator

transition

VO2

Mn

Enviromental friendly material

(環境調和型材料)

Zn

Fe

Clark number

O : (49.5) 1

Fe : (4.70)4

Co

O

PRB. 76 205108(2007)

Fe

science 303 661(2004)

Thin solid films 486 46(2005)

small4 1661(2008)

PRL.581574(1987)

Ni

Cu

ferromagnetic nanostructures
Ferromagnetic nanostructures

Pinning domain wall

Magnetic domain

➞Field of one direction of magnetic moment

Magnetic Domain wall

➞Field of rotation spin among magnetic domain

(磁区)

(磁壁)

Merit

Magnitic

domain

wall

  • Nonvolatile
  • High speed
  • High integration
  • Low consumed power
  • Unlimitedlywrite
  • Unlimitedly read

Fe3-xMnxO4-nanowire MFM image

Magnetic

domain

Magnetic

domain

Applied Physics Express 4 (2011) 033001

application

50nm

NanoLett. 9 1962(2009)

Current-driven domain wall motion

in a magnetic constricted nanowire

Nonconventional giant

nonlinearly response

100nm

~50nm

~70nm

Average of

non-uniform magnetic

応用物理 79 1071(2010)

n ano processing procedure for metal oxides
Nano processing procedure for metal oxides

Oxide has high physical hardness and chemical stability.

It is diffcult to fabricate a few dozen nanometer patterns.

Bottom up

Top down

Photo lithography

FIB lithography

Pulse laser

deposition

chemical vapor

deposition

LaAlO3

ZnO

ZnO

Cu2O3

APL. 84 5213(2004)

APL. 89 122101(2006)

EB lithography

AFM lithography

MoO3

TiO2

NanoLett. 9 1962(2009)

Appl. Surf. Sci. 253 1758(2006)

SuperlatticeMicrost46 513(2009)

JJAP. 42 6721(2003)

contents2
Contents
  • Introduction of keyword
    • 3d transition metal oxide & FZO
    • Magnetic domain and magnetic domain wall
    • Constricted ferromagnetic nanowire structure
    • Nano processing procedure for metal oxides
  • My research
    • Sidewall growth method & Fabrication process
    • Anneal condition
    • Three dimension MgOnanowire structure
    • Structure analysis by TEM
    • MgO growth mechanism
  • Conclusion
combination method
Combination method

Nanoimprint(NIL)

  • High processing accuracy of side surface
  • Control of position and shape

Pulse laser deposition(PLD)

  • Deposition of thin film from atomic layer
  • The most suitable method to fabricate thin film of oxide
  • Deposition time and angle

➞Control of width

  • Shape of substrate
  • ➞Control of shape and height of oxide structure

Excimer laser

~10nm

substrate

Fabrication of highly ordered nanopattern structures

purpose
Purpose

substrate

substrate

Fabrication of highly ordered nanowire structures

  • Anneal condition of MgOcrystalization
  • Structure analysis by TEM
  • MgOnanowire growth mechanism
fabrication process
Fabrication process

Three dimension MgOnanowire

MgO

resist

MgOsubstrate

MgOsubstrate

MgOsubstrate

MgOsubstrate

①cleaning substrate

②nanoimprint

③PLD(MgO)

④removing resist

FZOnanowire

FZO

<a few dozen nm

MgOsubstrate

MgOsubstrate

⑦removing MgO

⑥PLD(FZO)&ECR

⑤annealing

MgOsubstrate

mgo crystallization condition by postanneal
MgO crystallization condition by postanneal

MgO

STO(003)

STO(002)

MgO(022)

STOsubstrate

STOsubstrate

  • MgO was crystallized by postannealing at 1000℃
anisotropy growth of mgo nanowire

[010]

[010]

[010]

[010]

[010]

[010]

Anisotropy growth of MgOnanowire

[100]

[100]

[100]

[100]

[100]

[100]

MgOnanowire

Schematic diagram

After anneal (1000℃)

Before anneal

MgOnanowire

MgO(001)nanowire

substrate

Zig-Zag line

MgOsubstrate

[001]

MgO(001)substrate

MgO(001)substrate

[001]

300nm

[001]

500nm

MgOnanowire

MgO(001)nanowire

MgOnanowire

Parallel line

300nm

[010]

MgO(001)substrate

MgO(001)substrate

500nm

[100]

[001]

[001]

MgOsubstrate

[001]

structure analysis of mgo nanowire tem
Structure analysis of MgOnanowire (TEM)

MgOnanowire(TEM)

MgOnanowire(FFT)

MgOnanowire

MgOsubstrate

2nm

200nm

Fracture

direction

MgO substrate(TEM)

MgOsubstrate(FFT)

MgOnanowire

[110]

MgOsubstrate

10nm

I confirmed that quality of crystallized MgOnanowires is similar to MgO substrates.MgO grows so that MgOnanowire(001)[100]//MgOsubstrate(001)[100].

2nm

mgo growth mechanism

[010]

[010]

[010]

[010]

[010]

MgO growth mechanism

[100]

[100]

[100]

[100]

[100]

MgOnanowire

MgO(001)nanowire

substrate

Zig-Zag line

[110]

MgO(001)substrate

[001]

[001]

Growth

mechanism

MgO(001)nanowire

MgOnanowire

Flatness line

500nm

[110]

MgO(001)substrate

500nm

[001]

[001]

I confirmed that MgO(110)appears in side surface of MgOnanowire.

conclusion
Conclusion
  • I tried to fabricate the three dimension MgOnanowire structures.
  • I confirmed that MgO was crystallized by postannealing at 1000℃.
  • I confirmed that quality of crystallized MgOnanowires is similar to MgO substrates.
  • I confirmed MgO growth mechanism by TEM.
  • I succeed in fabrication of the MgOnanowires structure with flat MgO(110) side surface.
  • I have been trying to fabricate FZO nanowire structures on the 3D MgOnanowire substrate, and study their magnetic properties.

Future plane