1 / 6

HP4145A 半導体パラメータアナラザー

HP4145A 半導体パラメータアナラザー. ダイオード、トランジスタなどの電子デバイスの各種の直流特性を正確に測定 グラフ表示、パラメータ解析が可能. ⇒SOI TEG チップの照射前後の V D, I D の測定. GPIB で制御 　 V1:0 ～ 2V ,step0.1V V2: 測定. V1=Vs1. 47kΩ. V2=Vm1. 47kΩ. SMU(Source Monitor Units) を用いた測定. source V (SMU1) V: -0.5 ～ 1(V) step 0.01(V) I (SMU1): 測定

perry-schwartz
Download Presentation

HP4145A 半導体パラメータアナラザー

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. HP4145A半導体パラメータアナラザー • ダイオード、トランジスタなどの電子デバイスの各種の直流特性を正確に測定 • グラフ表示、パラメータ解析が可能 ⇒SOI TEGチップの照射前後のVD,IDの測定

  2. GPIBで制御 　 V1:0～2V ,step0.1V V2:測定 V1=Vs1 47kΩ V2=Vm1 47kΩ

  3. SMU(Source Monitor Units)を用いた測定 source V (SMU1) V: -0.5 ～ 1(V) step 0.01(V) I (SMU1):測定 compliance 100μA SMU1 V,I A Diode or module SMU2 Com

  4. module25台のI-V,I-R

  5. 各moduleの10μA付近での抵抗値 ・modeleの抵抗値　　 2～3.5kΩ ・50kΩを超えるものはない

  6. diodeとmoduleのI-V,I-R

More Related