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2001

First Year of IC Production. 1999. 2001. 2003. 2005. 2007. 2009. 2011. 2013. 2015. Research Required. Development Underway. Qualification/Pre-Production.

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2001

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  1. First Year of IC Production 1999 2001 2003 2005 2007 2009 2011 2013 2015 Research Required Development Underway Qualification/Pre-Production This legend indicates the time during which research, development, and qualification/pre-production should be taking place for the solution. Polished Wafer Conventional Silicon Ultra-Low Defect Material H2 Anneal Materials Selection (No Narrowing of Options Expected) Epitaxial Wafer P / P - P / P + P / P++ SOI Wafer Bonded H2 Split Porous Silicon Oxygen Implantation (SIMOX) Implant Dose 200 nm 200 CoO Wafer Diameter 300 mm 300 mm 450mm 450 mm 450 mm 675 mm Model-Based Parameter Specifications Physical-Based Yield Models Parameter Distributions Selection of Material Kill Factors • Statistical Specifications • Model-Based • Empirical-Based Material Acceptance Criteria Based on Long-Term Supplier Distributions Model-Based Empirical-Based

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