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IEE5328 Nanodevice Transport Theory and Computational Tools

IEE5328 Nanodevice Transport Theory and Computational Tools. (Advanced Device Physics with emphasis on hands-on calculations). Lecture #4: Ballistic I-V in 2DEG and 2DHG. Prof. Ming-Jer Chen Dept. Electronics Engineering National Chiao-Tung University

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IEE5328 Nanodevice Transport Theory and Computational Tools

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  1. IEE5328 Nanodevice Transport Theory and Computational Tools (Advanced Device Physics with emphasis on hands-on calculations) Lecture #4: Ballistic I-V in 2DEG and 2DHG Prof. Ming-Jer Chen Dept. Electronics Engineering National Chiao-Tung University April 10, 2013

  2. High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) Idsat (Multi-Gates and SOI) IEE5328 Prof. MJ Chen NCTU

  3. High-Performance FETs projected by ITRS 2011 (http://www.itrs.net) Idsat (Multi-Gates and SOI) IEE5328 Prof. MJ Chen NCTU

  4. Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk, SOI, and Multi-Gates) IEE5328 Prof. MJ Chen NCTU

  5. Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net) (Bulk, SOI, and Multi-Gates) IEE5328 Prof. MJ Chen NCTU

  6. Key Words: Iballistic is simply due to thermionic injection over the source-channel barrier Iballistic is Idsat you can theoretically obtain But, Iballistic is usually much higher than Idsat you can experimentally obtain • This difference is due to a handful of physical phenomena: • Effective Mobility and its reduction with channel length shrinkage • Backscattering in channel, in drain, and even in source • (rc well known in the channel) • Rsd • Injection Velocity • Source starvation • Off-equilibrium transport How can we shorten this gap such as to make experimental Idsat close to theoretical Iballistic?

  7. Two Basic Ways to calculate Iballistic: • Band Structure • 2. MOS Electrostatics Here, we focus on 2D case or the inversion layers of MOSFETs 2DEG: two-dimensional electron gas 2DHG: two-dimensional hole gas

  8. 2DEG or 2DHG Originally derived by Prof. Natori

  9. Further Reading: F.Assad, et al., “On the performance limits for Si MOSFET’s: A theoretical study,” IEEE Trans. Electron Devices, vol. 47, pp. 232-240, Jan. 2000.

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