Juan Fresneda Marugán Maratea 2007

Oct 21, 2014

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Correlation of Strain, optical and vibrational properties in GaN/AlN Quantum Dots Stacks with Variable Spacer Thickness. Juan Fresneda Marugán Maratea 2007. 6H-SiC. Sample GaN/AlN QD. 30 periods. ~ 3 nm. Spacer AlN. ~ 30 nm. QDs GaN.

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Juan Fresneda Marugán Maratea 2007

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Correlation of Strain, optical and vibrational properties in GaN/AlN Quantum Dots Stacks with Variable Spacer Thickness Juan Fresneda Marugán Maratea 2007
6H-SiC Sample GaN/AlN QD 30 periods ~ 3 nm Spacer AlN ~ 30 nm QDs GaN The Growth of correlated stacks of GaN/AlN has attracted much attention, since it has been demonstrated that the anisotropic strain field of the embedded islands induce the vertical self-alignment of dots.