Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates. 指導教授 : 管 鴻 教授 學 生 : 林耀祥 日 期： 97.12.01. Outline. Introduction Experiments Results and discussion Conclusion References. Introduction.
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指導教授: 管 鴻 教授
學 生: 林耀祥
to propagate vertically from the seed region through the top surface. From these observations, it can be concluded that the grooves formed on sapphire substrates along the (1010) direction is not suitable for growing AlN layers with reduced dislocation density.