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Memory Organization and Interfacing. CSE 2312 Maher Al-Khaiyat. Semiconductor Memory. Capacity Kbits (Kilobits) Mbits (Megabits). Organization Number of locations => Number of address lines Size of a location => Number of data lines. Semiconductor Memory (cont’d). Speed Access time

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memory organization and interfacing

Memory Organization and Interfacing

CSE 2312

Maher Al-Khaiyat

semiconductor memory
Semiconductor Memory
  • Capacity
    • Kbits (Kilobits)
    • Mbits (Megabits)
  • Organization
    • Number of locations => Number of address lines
    • Size of a location => Number of data lines
semiconductor memory cont d
Semiconductor Memory (cont’d)
  • Speed
    • Access time
  • Volatility
  • Programmability
memory organization
Number of address lines

Number of locations

Number of data lines

Memory Organization
nonvolatile memory
Nonvolatile Memory
  • Read-Only Memory (ROM)
  • Programming or Burning
    • PROM; one-time programmable
    • EPROM; erasable using UV radiation
    • EEPROM; electrically erasable
    • Flash ROM; erasable in a flash (fast time)
    • Mask ROM; mask technology
volatile memory
Volatile Memory
  • Random Access Memory (RAM)
  • Types
    • Static RAM (SRAM)
      • does not require refreshing
      • up to four transistors per cell
    • Dynamic RAM (DRAM)
      • requires refreshing
      • one transistor (capacitor) per cell
address decoding
D7

D0

32Kx8

A0

A15

A16

A14

A17

CS

A18

A19

WR

OE

MEMW

MEMR

Address Decoding

A19

A0

… … …

Range of addresses 08000h to 0FFFFh

conventional memory
Conventional Memory
  • 640K of RAM

FFFFFh

ROM 256K

C0000h

BFFFFh

VDR 128K

A0000h

  • Conventional memory
  • MS-DOS OS
  • Utilities
  • Applications
  • Etc…

9FFFFh

RAM 640K

004FFh

BIOS temp data

003FFh

Interrupt vector table

00000h

dram memory banks
64K x 4

64K x 4

64K x 1

Bank 3

64K x 4

64K x 4

64K x 1

Bank 2

256K x 4

256K x 4

256K x 1

Bank 1

256K x 4

256K x 4

256K x 1

Bank 0

DRAM Memory Banks

Example configuration of 640KB RAM

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