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Addressing Thermal and Power Delivery Bottlenecks in 3D Circuits

Addressing Thermal and Power Delivery Bottlenecks in 3D Circuits. Sachin S. Sapatnekar ECE Department University of Minnesota. Why 3D?. [Somewhere in Iowa; pop. Density of Iowa= 20 persons/km 2 ]. [Moscow=8500/km 2 ]. [New York=26000/km 2 ]. [Minneapolis, p.d. = 2700/km 2 ]. Layer 5.

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Addressing Thermal and Power Delivery Bottlenecks in 3D Circuits

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  1. Addressing Thermal and Power Delivery Bottlenecks in 3D Circuits Sachin S. Sapatnekar ECE Department University of Minnesota

  2. Why 3D? [Somewhere in Iowa; pop. Density of Iowa= 20 persons/km2] [Moscow=8500/km2] [New York=26000/km2] [Minneapolis, p.d. = 2700/km2]

  3. Layer 5 Layer 4 Layer 3 Layer 2 Layer 1 Bulk Substrate Schematic of a 3D IC Detailed view Generalized view Interlayer Via SOI wafers with bulk substrate removed Inter-layer bonds 1mm Bulk wafer Metal level of wafer 1 10mm 500mm Device level 1 Adapted from [Das et al., ISVLSI, 2003] by B. Goplen

  4. 3D technologies Wire-bonded 3D package Face-to-face Capacitive coupling Inductive coupling Through-Silicon via - SOI Through-Silicon via - bulk [R. Davis et al.]

  5. Thermal and Power Supply Integrity in 3D Current per power pin (2D) – ITRS • Higher current density, faster current transients • Thermal management: heat sink limitations • Power delivery issues: via resistance, limited number of supply pins Pins 3D 2D

  6. Resolving processor-memory bottlenecks [Loi et al., DAC06]

  7. Layer 5 Layer 4 Layer 3 Layer 2 Layer 1 Bulk Substrate Thermal challenges • Each layer generates heat • Heat sink at the end(s) • Simple analysis • Power(3D)/Power(2D) = m • m = # layers • Let Rsink= thermal resistance of heat sink • T = Power  Rsink • m times worse for 3D! • And this does not account for • Increased effective Rsink • Leakage power effects, T-leakage feedback • Thermal bottleneck: a major problem for 3D • Impacts delays, power, reliability

  8. Layer 5 Layer 4 Layer 3 Layer 2 Layer 1 Bulk Substrate Power delivery challenges • Each layer draws current from the power grid • Power pins at the extreme end tier(s) • Simple analysis • Current(3D)/Current(2D) = m • m = # layers • Let Rgrid= resistance of power grid • Vdrop = Current  Rgrid • m times worse for 3D! • And this does not account for • Increased effective Rgrid • Leakage power effects, increased current due to T-leakage feedback • Power bottleneck: a major problem for 3D • Impacts delays, reliability

  9. Thermal analysis and optimization in 3D

  10. Full-chip thermal analysis • Macroscale thermal analysis for full-chip profiles • (as against nanoscale analysis, considering electron-phonon interactions) • Heat generation • Switching gates/blocks act as heat sources • Time constants for heat of the order of ms or more • Thermal equation: • Boundary conditions corresponding to the ambient, heat sink, etc. • Self-consistency: Power = f(Temperature), Temperature = g(Power) + ~ ... ... heat sources wafer y z x ... ... ambient temperature + ~

  11. Thermal analysis • Thermal equation: partial differential equation • Boundary conditions corresponding to the ambient, heat sink, etc. • Self-consistency • Power is a function of temperature, which is a function of power! • Often handled using iterations • Finite difference method G T = P • Finite element method K T = P

  12. Heat Sink Performance optimization in 3D • Minimize power usage • Rearrange heat sources • Thermal vias/conduits • Improved heat sinking Pcells Rchip Chip Rheat sink

  13. 3D placement: One approach Objective Function: • Global Placement • Partitioning Placement • Thermal Aware Net Weighting • Thermal Resistance Reduction Nets • Coarse Legalization • Global Moves/Swaps • Local Moves/Swaps • Cell Shifting • Detailed Legalization [Goplen, DAC07]

  14. Cell 3 Cell 5 Heat Sink Thermal resistance reduction nets IOPad 1 Cell 4 Net1 Runtime vs. Circuit size Net2 Cell 1 IOPad 2 Net3 Cell 2 TRR Net 4 TRR Net 5 TRR Net 1 TRR Net 3 TRR Net 2 [Goplen, DAC07]

  15. Thermal vias Electrically isolated vias Used for heat conduction Thermal via regions Contains thermal vias Predictable obstacle for routing Variable density of thermal vias Row Region Inter-Row Region } Inter-layer } Layer } Bulk Substrate z y x Heat removal in 3D through thermal vias Thermal Via Substrate Thermal Via Region

  16. Thermal via insertion Temperature Profile: Before Temperature Profile: After Thermal Via Regions [Goplen, ISPD05]

  17. 3D routing with integrated thermal via insertion • Build good heat conduction path through dielectric: • Thermal vias: interlayers vias dedicated to thermal conduction. • Thermal wires: metal wires improves lateral heat conduction. • Thermal vias + thermal wires a thermal conduction network. • Thermal wires compete with lateral signal wire routing. • Thermal vias: large, can block lateral signal routing capacity. thermal wires thermal vias [Zhang, ASPDAC06]

  18. 3D Power Delivery

  19. Traditional power delivery • Requirements • Vdd, GND signals should be at correct levels (low V drop) • Electromigration constraints • Current density must never exceed a specification • For each wire, Ii/wi < Jspec • dI/dt constraints • Need to manage dI/dt to reduce inductive effects • Techniques for meeting constraints • Widening wires • Using appropriate topologies • Adding decoupling capacitances • Already challenged for 2D technologies • Reliable power delivery hard • Decaps get leaky • Circuit + CAD approaches necessary

  20. MIM decaps [Roberts 2005] • * Numbers deduced from Roberts et al., IEDM05 and PTM simulations

  21. Overall Algorithm Flow Initial setup Technology parameters 3D layout info. Build 3D power grid Transient power grid analysis Optimization loop NO Noise metric S ≠ 0 ? Stop YES LP based allocation of CMOS and MIM decaps

  22. Experimental Results • Comparison of three optimization strategies - VNs: number of violating nodes - Lkg: leakage current - maxC: maximum increment of congestion - avgC: average increment of congestion CMOS+MIM can achieve a good tradeoff between leakage power and routing congestion

  23. Multi-story power supply • Improved supply noise due to: • Reduced current magnitude • Cleaner middle supply voltage • Attractive for 3D chips: • Isolated substrate for each tier • Chip is naturally partitioned

  24. CAD solutions for multi-story circuits 2Vdd Vdd R GND

  25. Overall Design Flow Netlist and block information Floorplanning involving regular modules and regulators Assigning modules using a graph partition-based algorithm Module assignment

  26. Constructing the graph V1 A B M1 V5 V2 M5 M2 A’ B’ M4 M3 V4 V3

  27. 3D benchmarks • Exercised on GSRC floorplanning benchmarks • Largest floorplan has 300 modules • Comparison with (slow)simulated annealing method Runtime Comparison: > 103 x speedup over SA 27

  28. Conclusion • 3D IC technology holds great promise for the future • … provided the key problems can be addressed • Power, thermal issues are major bottlenecks for 3D integration • The root cause of both is closely related • Solutions can come through low power design, physical design, and novel circuit techniques

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