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Advisor : Professor Guey-Sheng Liou Reporter : Ming-Chi Tsai Date : 2013/11/15. Polyimide memory: a pithy guideline for future applications. J. Mater. Chem. C, 2013 , 1 , 7623-7634, G. S. Liou * et al. Introduction Experiment Results and Discussion Summary. Outline.

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advisor professor guey sheng liou reporter ming chi tsai date 2013 11 15
Advisor : Professor Guey-ShengLiou

Reporter: Ming-Chi Tsai

Date : 2013/11/15

Polyimide memory: a pithy guideline for future applications

J. Mater. Chem. C, 2013, 1, 7623-7634, G. S. Liou* et al.

outline
Introduction

Experiment

Results and Discussion

Summary

Outline
slide4
Polymer memory devices
  • Advantages :
    • Low cost
    • Solution processability
    • Flexibility
    • 3D stacking device
  • Polyimide is one of the most suitable material for memory
    • Thermal stability
    • Chemical resistance
    • Mechanical strength
slide5
Fabrication process of Polymer memory devices

J. Mater. Chem. C, 2013, 1, 7623-7634, G. S. Liou* et al.

principle
Principle

1st sweep : 0~4V an abrupt increase in current observed at 3.2V (writing)

2nd sweep : 0~4V (reading)

3rd sweep : 0~-4V an abrupt decrease in current observed at -2.1V (erasing)

4th sweep : 0~-4V OFF state

5th sweep : 0~4V (rewriting)

6th sweep : 0~4V (reading)

7th sweep : 0~4V turn off external power 1 min device turned off (erasing) and (rewriting)

8th sweep : (reading)

Memory type : DRAM

J. Am. Chem. Soc., 2006, 128, 8732-8733, En-Tang Kang* et al.

principle1
Principle
  • Field induced CT theory
  • Conformational change
  • LUMO Energy level
  • Dipole moment
  • Large conjugation

J. Am. Chem. Soc., 2006, 128, 8732-8733, En-Tang Kang* et al.

slide9
Polyimide synthesis
  • One-step polycondensation
  • Two-step polycondensation

ShahramMehdipour-Ataei*, et al., Iranian Polymer Journal,2008, 17,95-124

volatile dram and sram properties
Volatile DRAM and SRAM properties

1st sweep : 0~5V 2.7V (writing)

2nd sweep : 0~5V (reading)

3rd sweep : 0~-2V -0.9V (erasing)

4th sweep : 0~-2V OFF state

5th sweep : 0~5V (rewriting)

6th sweep : 0~5V (reading)

7th sweep : 0~5V power off 1 min (erasing) and (rewriting)

8th sweep : (reading)

Memory type : DRAM

3rd sweep : 0~-6V-0.9V (erasing)

-2.3V (writing)

Can be written bidirectionally

J. Appl. Phys., 2009, 105, 044501, En-Tang Kang* et al.

slide12
Volatile DRAM and SRAM properties

Good stability when operated time

1st sweep : 0~4V 2.3V (writing)

2nd sweep : 0~4V (reading)

3rd sweep : 0~-4V (reading) nonerasable

4th sweep : 0~-4V power off 4 mins (rewriting)

5th sweep : 0~-4V (reading)

6th sweep : 0~-4V power off 4 mins (rewriting)

Memory type : SRAM

Chem. Mater., 2009, 21, 3391–3399, En-Tang Kang* et al.

slide13
Volatile DRAM and SRAM properties

PI → PA

DARM → SRAM

J. Mater. Chem., 2012, 22, 14085, G. S. Liou* et al.

slide14
Volatile DRAM and SRAM properties
  • PA (SARM device)
  • Block the occurring of back CT
  • Higher dipole moment
  • More nonplanar
  • Lower switching on voltage -3.3V
  • Higher HOMO energy level
  • Fewer intermediate LUMOs

Stability test

Both PI and PA memory devices

are stability when operating

slide15
Non-volatile FLASH and WORM type memory properties

Take APTT-6FDA for example

1st sweep : 0~4V 1.6V (writing)

2nd sweep : 0~4V power off 10 mins (reading)

3rd sweep : 0~-6V (reading & erasing) -3.2V

4th sweep : 0~-6V OFFstate

5th sweep : 0~4V (rewriting)

6th sweep : 0~-4V power off 10 mins (reading)

Memory type : Flash memory

Macromolecules,2009, 42, 4456–4463, Mitsuru Ueda*, W. C. Chen* et al

slide16
Non-volatile FLASH and WORM type memory properties
  • Write Once Read Many times (WORM)
  • Nonerasable
  • Highest dipole moment

J. Mater. Chem., 2012, 22, 14085, G. S. Liou* et al.

slide17
Non-volatile FLASH and WORM type memory properties

From Volatile to Nonvolatile by PeryleneDiimideComposition in Random Copolymer

Acceptor

Donor

The (PBI-0, PBI-1, PBI-2.5) and (PBI-5, PBI-10) devices provided volatile and nonvolatile WORM behavior, respectively.

Macromolecules, 2012, 45, 4556, Mitsuru Ueda*, W. C. Chen*, C. L. Liu* et al.

summary1
Summary

3D structure (192 cells)

In future application of

PI as a good memory

device material

Flexible

  • Devices structure and operating mechanism of the memory device is quite simple
  • Low processing cost
  • Show extremely high endurance during long term operation
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