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GaSb/SL0

University of Houston. GaSb rich. InAs rich. +7. +6. +5. +4. +3. (001). +2. +1. 120 nm. GaSb/SL0. -1. -2. -3. Fig. 2. AFM image demonstrating the formation of nanowire structures. -4. Fig. 1. XSTM image of the typical structure of LCM in an InAs/GaSb superlattice. -5.

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GaSb/SL0

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  1. University of Houston GaSb rich InAs rich +7 +6 +5 +4 +3 (001) +2 +1 120 nm GaSb/SL0 -1 -2 -3 Fig. 2. AFM image demonstrating the formation of nanowire structures. -4 Fig. 1. XSTM image of the typical structure of LCM in an InAs/GaSb superlattice. -5 Fig. 4. Room temperature absorption of structures with (A and B) and without (C) LCM. Fig. 3. XRD reciprocal space map of LCM sample. Lateral Composition Modulation in InAs/GaSb Superlattices: Nanometer Sized Quantum WiresDonna W. Stokes

  2. University of Houston Lateral Composition Modulation in InAs/GaSb Superlattices: Nanometer Sized Quantum WiresDonna W. Stokes The PI lectures on nanotechnology and it’s importance to our future to 8th grade students at the Detroit Academy for Science, Math and Technology in Detroit, Michigan.

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