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Annual Meeting WP2- Sensors

Annual Meeting WP2- Sensors. Heinz Pernegger / CERN 20 November 2013. Sensors. Brief update to sensor related work currently in progress by TALENT fellows Planar Sensors 3D sensors CVD diamonds CMOS sensors. Planar Sensors / CiS. Arno

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Annual Meeting WP2- Sensors

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  1. Annual Meeting WP2- Sensors Heinz Pernegger / CERN 20November 2013

  2. Sensors • Brief update to sensor related work currently in progress by TALENT fellows • Planar Sensors • 3D sensors • CVD diamonds • CMOS sensors TALENT Midterm Review 19.11.2013

  3. Planar Sensors / CiS • Arno • Developed and processed multi-chip sensors in view of Phase 2 upgrade • Next steps -> flip chip with FEI4 to do sensor functional tests • Move to 6 inch processing TALENT Midterm Review 19.11.2013

  4. CiS planar sensor layouts Comparisonbetween different sensorsizes Different sensordesignsforpresentandfutureof ATLAS TALENT Midterm Review 19.11.2013

  5. CiS - 4“ imminent production • Testingof LDI (Laser Direct Imaging, maskless) forimplantandoxidelayers • 1 batch (9 wafers <100>) withnochangestolayout • 1 batch (5 wafers <100>, 4 wafers <111>) with partial minimisationofimplantandoxidelayers [µm]

  6. CiS FE-I4 SC with bias grid variants • Bias Grid/DotVariations • Var. 1: biasdotsunchanged, grid per column • Var. 2: biasdotsunchanged, gridatpixelcenter • Var. 3: biasdotsandgridatpixelcenter

  7. CiS - FE-I4 SC variations overview • Pixel size 250 x 25 µm2 • Only half of the pixels are read out • 2 different bias grid layouts • Additional testing of variations of • Bias dot implant diameter • Pixel implant width

  8. 3D detectors • Sonia & Laura • Focus on characterization of recently produced sensors by CNM, FBK and Sintef • Main focus of sensor measurements is IV behavior and breakdown voltage of devices • Time-stability of current measurements • Correlation guard ring current vs active area current • Shift of breakdown voltage vs different conditions TALENT Midterm Review 19.11.2013

  9. 3D – Oslo/Sintef • Measurements by Laura • Study IV characteristics after different sensor treatments How they should look  C16_CMS_1_81 After Baking Current (-A) Voltage (V) Current (-A) Voltage (V) TALENT Midterm Review 19.11.2013

  10. 3D – Cern/CNM/IFAE • Measurements by Sonia • Correlate IV measured on guard ring to full active area • Monitor IV behavior all through the assembly process of modules TALENT Midterm Review 19.11.2013

  11. 3D continued • Use UBM processed sensors to contact all pixels on probe station • Determine V_bd after UBM and dicing on full active area and compare to guard ring current measured on wafer level • Preliminarily found that guard ring only is not ideal as QA measurement for full sensor • Triggered re-measurements of sensors in IBL SC module production TALENT Midterm Review 19.11.2013

  12. Test system/Bonn • By Slava • Setting up a four pixel chip read-out system • ATLAS FE-I4 chips • Based on the newly developed system • Characterization of the system performance • Lab • Test beam measurements Four chip read-out – Introduced in 2012 – New adapter board: burn-in card – Support of up to four FE-I4 chips (four single- or two double chip modules) Viacheslav Filimonov (ESR2, WP2) TALENT Midterm Review 19.11.2013 7

  13. CVD - Diamond Beam Monitor • Matevz • Most focus went to construction, module measurement and integration of DBM telescopes TALENT Midterm Review 19.11.2013

  14. DBM module construction MDBM03 (TDBM01) • From TALENT side a collaboration by Bonn, IZM, CERN • Found larger area of disconnected bumps – resolved by second reflow in different equipment • Tested module function with Sr90 source before and after integration to telescopes MDBM31 (TDBM05) Hit map on telescopes (different modules) Hit map on modules during DBM QA William Trischuk: Diamond Beam Monitor

  15. Diamond - application • CERN/CIVIDEC • Use diamonds as beam monitors in accelerator instrumentation and neutron detector • Study signal response of scCVDpre/post irradiation to understand charge trapping mechanisms • Use TCT and TSC setups • Over very large temperature range (2K to RT) • Develop FPGA-based signal processing for scCVD as beam monitors using the knowledge from measurements above • Test beam monitor with converter foil as neutron detector at different energies. TALENT Midterm Review 19.11.2013

  16. N -> aConversion/CIVIDEC nfrom reactor Li converter foil Diamond detector Pulse shapes n a Rectangular = alphas g Non-rectangular = gammas Goal: Reject the gamma-background via real-time pulse shape analysis.

  17. Background rejection/CIVIDEC Alpha particle = rectangular shape Photon = non-rectangular

  18. Depleted CMOS sensors • Potential as “Sensor” • CMOS -> large volume at lower price + larger wafers • higher operational voltage and/or higher resistivity processesallow charged particle detection by depletion: Depleted CMOS sensors • A number of potential advantages: • Sub-pixel structure -> Better spatial resolution • Analog amplifier + descriminator on sensor -> digital readout with possibility to combined cells to pixel or strips • Create depleted volume under n-well -> this serves as volume for particle detection • Electronics is include in sensor pixel -> “Smart Pixel” allows first processing of information on sensor • Depleted Monolythic Active Pixel Sensor (DMPAS) TALENT Midterm Review 19.11.2013

  19. AMS 180nm HVCMOS-FEI4 • Measurements by Simon & Antonello • uses AMS 180 nm HV process (p-bulk) ... 60-100 V • deep n-well to put pMOS and nMOS (in extra p-well) • some CMOS circuitry possible (ampl. + discr.) •  need / profit from FEI4 and followers • ~10-20 µm depletion depth 1-2 ke signal • various pixel sizes (~20x20 – 50x125 µm2) • several prototypes • also strip like geometries possible • replaces „sensor“ (amplified signal) in hybrid pixel bump bonding or glue bonding • indications of radiation hardness to ~ 1016neq / cm2 I. Peric et al. TALENT Midterm Review 19.11.2013

  20. Signal formation • Hybrid detector = CMOS sensor glued to ROC • Carried out pre (right) and post (left) irradiation measurements • Signal seen after 1016n/cm2 • In the future need to understand the details of charge collection, field and charge trapping • Study different processes and foundries with “common cell layout” • High voltage processes • High resistivity processes • ESR 6 join the work on depleted CMOS sensors HV2FEI4-V2 w/ radharddesign features Sr-90, 1400 e- Fe-55, 1660 e- I. Peric et al.

  21. HVCMOS afterirradiation preliminary irradiation tests: using reactor neutrons 1x1015 and 1x1016neq/cm2 also to protons and X-ray (862 Mrad !) HV2FEI4 glue bonded to FEI4 and irradiated to 1 x 1015neq/cm2 DESY testbeam still working very preliminary results after 1 x 1016neq/cm2 - @RT after ~30 days / annealing - source scan with ~25 V bias - still alive, noise occ ~10-10

  22. Outlook • Sensor work wide spread between TALENT members • Many TALENT fellow from different WP contribute to sensor RD with many different and interesting measurements! • RD on different technologies looks well balanced across • Planar • 3D • Diamonds • CMOS • Looking forward to your ideas & comments! TALENT Midterm Review 19.11.2013

  23. Thank you for your attention

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