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Anna Maria Fiorello - Research Dept

ATLAS-Pixel Project: Bump Bonding. ATLAS BUMP BONDING PROCESS . Anna Maria Fiorello - Research Dept. ATLAS-Pixel Project: Bump Bonding. BUMP BONDING PROCESS. Bumping. Requirements:. Pitch: . 50 m.  5000 contacs/cm 2. Density :. Bump Material:. INDIUM + Under Bump Metal.

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Anna Maria Fiorello - Research Dept

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  1. ATLAS-Pixel Project: Bump Bonding ATLAS BUMP BONDING PROCESS Anna Maria Fiorello - Research Dept

  2. ATLAS-Pixel Project: Bump Bonding BUMP BONDING PROCESS Bumping Requirements: • Pitch: 50 m 5000 contacs/cm2 • Density : Bump Material: INDIUM + Under Bump Metal Process: LIFT OFF e-BEAM EVAPORATION Deposition technique: Anna Maria Fiorello - Research Dept

  3. ATLAS-Pixel Project: Bump Bonding Wafer Cleaning Photolithography Plasma activation Evaporated Indium Wet Lift off process BUMP BONDING PROCESS • Process parameters: • Resist Thickness: 15 m • Pre-bake: 30min@80 °C • Deposition rate: 0.5 m/min • Dep. Pressure: 9 x 10 -7 Torr • T during Dep.: < 50 °C Anna Maria Fiorello - Research Dept

  4. ATLAS-Pixel Project: Bump Bonding BUMP BONDING PROCESS • BUMPING RESULTS • Final Bump Thickness: 6.8 + 0.2m • Thickness uniformity: + 3000 Å (on 6” wafer) • Fault Rate: 2 x 10-5+ 0.6 x 10-5 Anna Maria Fiorello - Research Dept

  5. ATLAS-Pixel Project: Bump Bonding Equipment: FC 6 KARL SUSS BONDER 100°C/35N/40s 100°C/30N/40s 90°C/25N/42s BUMP BONDING PROCESS Bonding Parameters: Anna Maria Fiorello - Research Dept

  6. ATLAS-Pixel Project: Bump Bonding 25 N (on 3800 bumps) 90 °C 90 °C 42 sec BUMP BONDING PROCESS Bonding Selected parameters: Force: SubstrateTemperature: Chip Temperature: Time: Anna Maria Fiorello - Research Dept

  7. ATLAS-Pixel Project: Bump Bonding Rsensor Vbias V(i)bump R(i)bump …… Rfront-end BUMP BONDING TESTING Electrical measurements • Measure of bump connection resistance, which must be small (<(100W)) not to significantly contribute to the front-end noise. • It is well known that In develops an oxide layer once taken out of the vacuum tank where the bump deposition is done. In2O3, is an insulator. • It is desirable the oxide layer is automatically broken when the bias is applied to the sensor. • For this to happen the resistance of the oxide must be high enough in order to develop a V(i)bump across it such as to break the insulating layer. Anna Maria Fiorello - Research Dept

  8. ATLAS-Pixel Project: Bump Bonding Probe needle Probe needle BUMP BONDING TESTING Electrical measurements • “electronics dummy chips” have been used but - instead of mating them to “sensor dummy chips” to build long chains, we flipped them on “electronics dummy chip” too. This allows to measure 18+18 individual bumps (through ~55 Ohm paths) along the periphery of the chips (the most critical region for our flipping process). • INFN has measured the individual resistance and the breakdown voltage Anna Maria Fiorello - Research Dept

  9. ATLAS-Pixel Project: Bump Bonding ALENIA3 flipped @20C ALENIA1 flipped @100C 1000000 1000000 100000 100000 10000 10000 Bump resistance Initial R Initial R Bump resistance (Ohm) 1000 1000 After 3V applied R after 3V applied 100 100 10 10 1 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 3 4 6 7 8 9 11 12 20 1 2 5 10 13 14 15 16 17 18 19 bump# Bump# Electrical measurements • Samples at 20C and 100C have been bonded • First the resistance of the bumps as measured with a digital ohmeter for 10+10 bumps, before ad after applying 3V through an ordinary battery. • It can be observed that: • @20C half of the bumps have initially an oxide layer while at 100C this happens in only 10% of the cases; • once the oxide is broken the bump resistance is uniformly low (~10 Ohm); Anna Maria Fiorello - Research Dept

  10. ATLAS-Pixel Project: Bump Bonding Rbump Voltage generator Voltmeter Voltmeter 100kohm BUMP BONDING TESTING Electrical measurements • Measuring resistance with a digital meter we apply a voltage across the bump The value of this voltage depends on the resistance to be measured (few mV @60 Ohms, 200mV @100kohm, 600mV @2Mohm) • In order to explore the region below 200mV and to understand where the oxide breaks in case a constant voltage is applied the following set-up has been used • It is possible apply a known voltage across the bump and measure the resistance at the same time. Anna Maria Fiorello - Research Dept

  11. ATLAS-Pixel Project: Bump Bonding BUMP BONDING TESTING • Ramping the voltage tell us where the oxide breaks • Breaking happens at ~0.5V if flipping @20C and @4.3V for the unique case @100C, indicating a thicker oxide. • With the same set-up it has also been studied how long the oxide survives if the voltage generator is set to 20mV (voltage on bump and current through it will depend on the bump resistance, but are <20mV and <200 nA ) • Using a new set flipped @20C and looked at 20 bumps, 6 of them had large initial resistance (i.e. similar pattern as previous sample) • Waiting up to 30’ and all oxide layers broke. Anna Maria Fiorello - Research Dept

  12. ATLAS-Pixel Project: Bump Bonding ALENIA2 flipped @100C 1000000 100000 10000 Initial R bump resistance 1000 After oxide breaking 100 10 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 bump # BUMP BONDING TESTING • Then it was studied if a pulse is as effective as a constant voltage in breaking the oxide layer • Pulses : • duration=10 msec • period=500 msec • The bump oxide layers have been broken using pulses, instead of constant voltage Anna Maria Fiorello - Research Dept

  13. ATLAS-Pixel Project: Bump Bonding BUMP BONDING TESTING Conclusions on Oxide Resistance • AMS In oxide is thin (low resistance (100k)) and already broken in 50% to 90% of the cases (depends on flipping parameters). Breaking the residual oxide requires low voltages ((50mV) for minutes) either constant or pulsed and low currents ((100nA)) • The bump resistance after oxide breaking is low enough ((10W)) to allow proper operation of the front-end electronics and it is stable in time • Flipping at 100C is beneficial both for bump adhesion and for oxide breaking. Anna Maria Fiorello - Research Dept

  14. ATLAS-Pixel Project: Bump Bonding BUMP BONDING TESTING • ActivityUntil now : • 12 Single chip assembling and 4 full module (1Tile with 16 Front End Chips) have been completed and tested • X-Ray radiograph • test in laboratory • test over radation beam • Several “dummy chip” assembling to set parameters, mechanics, reworking, etc Anna Maria Fiorello - Research Dept

  15. ATLAS-Pixel Project: Bump Bonding BUMP BONDING TESTING X-ray on a full module: border between two front end Good alignment Anna Maria Fiorello - Research Dept

  16. ATLAS-Pixel Project: Bump Bonding BUMP BONDING TESTING • ~10 shorts on 50000 bumps Anna Maria Fiorello - Research Dept

  17. ATLAS-Pixel Project: Bump Bonding FE_B (full-CMOS) thr= 4200 e sthr= 150 e noise= 170e BUMP BONDING TESTING Lab test: Noise and threshold dispersion Anna Maria Fiorello - Research Dept

  18. ATLAS-Pixel Project: Bump Bonding 1015 mips/cm2 thr= 4900 e noise= 420e BUMP BONDING TESTING Threshold dispertion and noise of irradiated Pixel Sensors Anna Maria Fiorello - Research Dept

  19. ATLAS-Pixel Project: Bump Bonding BUMP BONDING TESTING Thresholds (4500e) and noises of a sensor assembled with a thinned (150 m) electronics The pressure applied to bond In-bumps allow to level the warped thinned chip Until now the thinned electronics has been assembled only by In-bumps First Data Anna Maria Fiorello - Research Dept

  20. ATLAS-Pixel Project: Bump Bonding BUMP BONDING TESTING Bare Module Three chips (E, D, C) do not respond to the digital injection One (7) is unstable and induce noise in the other: chip 6 from380 to520 e- chip 1 from180 to500 e- chip 3 from190 to380 e- Anna Maria Fiorello - Research Dept

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