1 / 2

E QW(4nm) = 2.81*[1+(3/4)] -1 = 3.381 E QW(16nm)= 2.81*[1+(1/16)] -1 = 3.652 QB 厚度增加 → QW 電場上升

E QW(4nm) = 2.81*[1+(3/4)] -1 = 3.381 E QW(16nm)= 2.81*[1+(1/16)] -1 = 3.652 QB 厚度增加 → QW 電場上升 E QB(4nm) = -2.81*[ 1 +(4/3)] - 1 = -1.2042 E QB(16nm ) = -2.81*[1 +(16/3 )] -1 = -0.4436 QB 厚度增加 → QB 電場減少.

kaye-moon
Download Presentation

E QW(4nm) = 2.81*[1+(3/4)] -1 = 3.381 E QW(16nm)= 2.81*[1+(1/16)] -1 = 3.652 QB 厚度增加 → QW 電場上升

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. EQW(4nm)= 2.81*[1+(3/4)]-1 = 3.381 EQW(16nm)= 2.81*[1+(1/16)]-1= 3.652 QB厚度增加→QW電場上升 EQB(4nm)= -2.81*[1+(4/3)]-1 = -1.2042 EQB(16nm)= -2.81*[1+(16/3)]-1 = -0.4436 QB厚度增加→QB電場減少

  2. 較薄的QB厚度有較薄的QW位勢差,載子經過QW時動能會較小,較小動能意味著電子在QW被電洞捕捉的機會比較高,也就是說leakage較少droop會降低較薄的QB厚度有較薄的QW位勢差,載子經過QW時動能會較小,較小動能意味著電子在QW被電洞捕捉的機會比較高,也就是說leakage較少droop會降低

More Related